Datasheet > BAV19-L0R0G

BAV19-L0R0G

更新时间： 2024-11-25 01:11:35

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
High Voltage Switching Diode

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中文翻译

获取价格

数据手册

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BAV19-L0R0G 数据手册

BAV19 / BAV20 / BAV21

Taiwan Semiconductor

Small Signal Product

High Voltage Switching Diode

FEATURES

- Fast switching device (trr<4.0ns)

- Through-hole device type mounting

- Hermetically sealed glasss

- Solder hot dip tin (Sn) lead finish

- All external surfaces are corrosion resistant and

leads are readily solderable

- Packing code with suffix "G" means

Halogen free

DO-35

Hermetically Sealed Glass

MECHANICAL DATA

- Case: DO-35 package

- High temperature soldering guaranteed: 260^oC/10s

- Polarity: Indicated by black cathode band

- Weight: 109 ± 4 mg

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Power Dissipation

P_D

500

Pulse Width = 1 s , Square Wave

Peak Forward Surge

Current

I_FSM

Pulse Width = 1 μs , Square Wave

200

I_O

Average Forward Current

^oC/W

^oC

Thermal Resistance (Junction to Ambient)

Junction and Storage Temperature Range

R_θJA

300

T_J, T_STG

-65 to +200

PARAMETER

MIN

120

200

250

MAX

SYMBOL

UNIT

BAV19

I_R= 100 μA

V_(BR)

Reverse Breakdown Voltage

Forward Voltage

BAV20

BAV21

I_F= 100 mA

I_F= 200 mA

V_R= 100 V

V_R= 150 V

V_R= 200 V

1.00

1.25

V_F

BAV19

BAV20

BAV21

I_R

Reverse Leakage Current

100

V_R= 0 , f = 1.0 MHz

(Note 1)

Junction Capacitance

C_J

trr

Reverse Recovery Time

Note 1: Test condition : I_F= I_R= 30mA , R_L=100Ω , I_RR=3mA

Document Number: DS_S1412015

Version: D14

12 3 4

中文翻译

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与BAV19-L0R0G相关器件

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BAV19P	SECOS	获取价格	Surface Mount Switching Diode
BAV19R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon,
BAV19R0	TSC	获取价格	High Voltage Switching Diode
BAV19R0G	TSC	获取价格	High Voltage Switching Diode
BAV19S	TDK	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon
BAV19S	DIODES	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon
BAV19-T	RECTRON	获取价格	SIGNAL DIODE,
BAV19T/R	NXP	获取价格	DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
BAV19T26A	TI	获取价格	0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
BAV19T26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35