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BAV19-T PDF预览

BAV19-T

更新时间: 2024-02-18 00:09:58
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5页 93K
描述
SIGNAL DIODE,

BAV19-T 数据手册

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BAV17  
THRU  
BAV21  
SMALL SIGNAL SWITCHING DIODE  
FEATURES  
Silicon epitaxial planar diode  
DO-35 Package,glass case  
High speed switching diode  
500 mW power dissipation  
*
*
*
*
*
DO-35  
Polarity: Color band denotes cathode  
(
)
)
.022 0.6  
DIA.  
(
.018 0.46  
(
)
1.083 27.5  
TYP.  
(
)
.150 3.8  
MAX.  
(
)
.087 2.2  
DIA.  
MAX.  
(
)
1.083 27.5  
TYP.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS  
UNITS  
BAV17  
20  
25  
BAV18  
50  
60  
BAV19  
100  
BAV20  
150  
200  
BAV21  
200  
250  
Reverse voltage  
Peak reverse voltage  
Average forw ard rectified current  
Half w ave rectification w ith resist.load  
V
V
VR  
120  
VRM  
mA  
I(AV)  
2501)  
T =  
and f 50Hz  
Forw ard surge current @ t<1s and T =  
@
25  
A
1.0  
A
mW  
K/W  
25  
IFSM  
Ptot  
RθJA  
TJ  
J
5001)  
350  
Pow er dissipation  
@ TA=25  
Thermal resistance junction to ambient  
Junction temperature  
Storage temperature range  
175  
-55 --- +175  
TSTG  
1)Valid prov ided that leads at a distance of 8 mm from case are kept at ambient temperature.  
ELECTRICAL CHARACTERISTICS  
MIN  
TYP  
-
MAX  
1.0  
UNITS  
V
Forw ard voltage  
@
IF=100mA  
@Tj=25  
@Tj=100  
@ V =V =0 f=1MHZ  
V
F R  
-
-
-
VF  
IR  
100  
15  
nA  
-
-
Leakage current  
μA  
at reverse voltage  
-
1.5  
-
-
Capacitance  
Reverse recovery time  
from IF=30mA to IR=30mA  
from IRR=3mA, RL=100Ω.  
pF  
ns  
CJ  
trr  
-
50  
1)Valid prov ided that leads at a distance of 8 mm from case are kept at ambient temperature.  
2019-04/08  
REV:O  

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