Datasheet > BAV103/G,115

BAV103/G,115

更新时间： 2024-11-06 19:31:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	100K
描述
BAV103

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技术参数
数据手册

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BAV103/G,115 技术参数

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BAV103/G,115 数据手册

BAV102; BAV103

Single general-purpose switching diodes

Rev. 4 — 6 August 2010

Product data sheet

1. Product profile

1.1 General description

Single general-purpose switching diodes, fabricated in planar technology, and

encapsulated in small hermetically sealed glass SOD80C Surface-Mounted

Device (SMD) packages.

Table 1.

Product overview

Type number

Package

NXP

Configuration

JEITA

BAV102

BAV103

SOD80C

single

1.2 Features and benefits

High switching speed: t_rr≤ 50 ns

Low leakage current

Low capacitance: C_d≤ 5 pF

Small hermetically sealed glass

SMD package

1.3 Applications

High-speed switching

Voltage clamping

General-purpose switching

Reverse polarity protection

1.4 Quick reference data

Table 2.

Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max Unit

[1][2]

I_F

forward current

250

V_R

reverse voltage

BAV102

150

200

BAV103

[3]

t_rr

reverse recovery time

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] When switched from I_F= 30 mA to I_R= 30 mA; R_L= 100 Ω; measured at I_R= 3 mA.

12 3 4 5 6 7...11

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