Datasheet > BAV101

BAV101

更新时间： 2024-10-27 02:55:23

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
5页	1470K
描述
MINI MELF Glass-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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BAV101 数据手册

BAV10 0 - BAV10 3

HD DL10

MINI MELF Glass-Encapsulate Diodes

Small Signal Fast Switching Diodes

Features

MINI MELF(SOD- 8 0 / LL- 3 4 )

●

V_R50-200V

I_F250mA

Applications

●

Extreme fast switches

BAV

Item

Unit

Conditions

Symbol

10 0

10 1

10 2

10 3

200

250

V_RRM

100

Repetitive Peak Reverse Voltage

150

120

200

60Hz Half-sine wave, Resistance

load, Ta=25℃

I_F

Forward current

250

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave,1 cycle,

Ta=25℃

I_FSM

Junction Temperature

Storage Temperature

Power Dissipation

T_J

℃

-55~+175

-55 ~ +175

400

T_STG

P _tot

igh Diode Semiconductor

12 3 4 5

中文翻译

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与BAV101相关器件

型号	品牌	获取价格	描述	数据表
BAV101/D1	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, GLASS, MINIMELF-2
BAV101/T3	NXP	获取价格	DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN, Signal Dio
BAV101_09	PANJIT	获取价格	HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES
BAV101-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.125A, 120V V(RRM), Silicon, GLASS, MINIMELF-2
BAV10116	NXP	获取价格	DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
BAV10136	NXP	获取价格	DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
BAV10153	NXP	获取价格	DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
BAV101GS08	TEMIC	获取价格	Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon,
BAV101-GS08	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAV101GS18	TEMIC	获取价格	Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon,