BAV102

更新时间： 2024-09-14 08:48:55

品牌	Logo	应用领域
美微科 - MCC		信号二极管 IOT
页数	文件大小	规格书
4页	750K
描述
Small Signal Diodes

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中文翻译

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数据手册

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BAV102 数据手册

M C C

BAV100

THRU

BAV103

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

RoHS Compliant. See ordering information)

Moisture Sensitivity Level 1

Silicon Epitaxial Planar Diodes

These diodes are also available in other case styles including: the DO-35 case

with the type designations BAV19 to BAV21, the SOD-123 case with the type

designations BAV19W to BAV21W, the SOT-23 case with the type designations

BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS to

BAV21WS.

Small Signal Diodes

ꢀ

Maximum Ratings

MINIMELF(SOD-80C)

Continuous Reverse

Voltage

BAV100

BAV101

BAV102

BAV103

50V

100V

150V

200V

T_A=25^OC

Cathode Mark

Repetitive Peak Reverse

Voltage BAV100

60V

120V

200V

250V

BAV101

BAV102

BAV103

V_RRM

(1)

Forward DC Current

250mA

T_A=25^OC

I_F

Rectified Current (Average)

Half Wave Rectification

with Resist. Load

f>50Hz,

T_A=25^OC

I_(FAV)

200mA

Repetitive Peak Forward

Current

(1)

625mA

f>50Hz, T =25^OC

I_FRM

Surge Forward Current

Power Dissipation

I_FSM

1.0A

T<1s, Tj =25^OC

T_A=25^OC

DIMENSION

P_TOT

400mW

DIM

INCHES

NOTE

Thermal Resistance

T_A

375^OC/W

MIN

MAX

.146

.016

.059

MIN

3.30

0.20

1.40

MAX

3.70

0.40

1.50

Junction to Ambient Air⁽²⁾

.130

.008

.055

Operating and Stora ge

temperature Range

-55 to +150^OC

T_S, T_STG

Note: (1) Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics @ 25°C Unless Otherwise Specified

Maximum Forward Voltage

SUGGESTED SOLDER

PAD LAYOUT

T_A=25^OC

I_F= 100mA

V_F

1.00V

0.105

I_F= 200mA

1.25V

Maximum Leakage current

BAV100

BAV101

BAV102

BAV103

100nA

15uA

100nA

15uA

100nA

15uA

100nA

15uA

V_R=50V

V_R=50V, Tj=100^OC

V_R=100V

0.075”

I_R

V_R=100V, Tj=100^OC

V_R=150V

V_R=150V, Tj=100^OC

V_R=200V

0.030”

V_R=200V, Tj=100^OC

Typital Capacitance

C_TOT

t_rr

1.5pF

V_R=0V, f=1.0MHz

Maximum Reverse recovery

time

I_F=30mA, I =30mA

50ns

I =3.0mA,

R_L=100 OHM

Typical Dynamic Forward

Resistance

R_F

5.0 OHM

I_F=10mA

Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 5.

2. Valid provided that electrodes are kept at ambient temperature

www.mccsemi.com

Revision: A

2011/01/01

1 of 4

12 3 4

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与BAV102相关器件

型号	品牌	获取价格	描述	数据表
BAV102,115	NXP	获取价格	BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin
BAV102/D1	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, GLASS, MINIMELF-2
BAV102/D2	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, GLASS, MINIMELF-2
BAV102/T1	ETC	获取价格	DIODE GENERAL PURPOSE
BAV102_10	NXP	获取价格	Single general-purpose switching diodes
BAV102-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MINIMELF-2
BAV102GS08	TEMIC	获取价格	Rectifier Diode, 1 Element, 0.25A, 200V V(RRM), Silicon,
BAV102-GS08	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAV102GS18	VISHAY	获取价格	Rectifier Diode, DO-213AA, GLASS, SOD-80, MINIMELF-2
BAV102-GS18	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage

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