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BAV102T/R PDF预览

BAV102T/R

更新时间: 2024-09-14 13:01:23
品牌 Logo 应用领域
恩智浦 - NXP 二极管开关通用开关IOT
页数 文件大小 规格书
11页 113K
描述
DIODE 0.25 A, 200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BAV102T/R 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.16
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JESD-30 代码:O-LELF-R2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:5 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.25 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向电流:0.1 µA
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAV102T/R 数据手册

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BAV102; BAV103  
Single general-purpose switching diodes  
Rev. 4 — 6 August 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Single general-purpose switching diodes, fabricated in planar technology, and  
encapsulated in small hermetically sealed glass SOD80C Surface-Mounted  
Device (SMD) packages.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Configuration  
JEITA  
BAV102  
BAV103  
SOD80C  
-
single  
1.2 Features and benefits  
„ High switching speed: trr 50 ns  
„ Low leakage current  
„ Low capacitance: Cd 5 pF  
„ Small hermetically sealed glass  
SMD package  
1.3 Applications  
„ High-speed switching  
„ Voltage clamping  
„ General-purpose switching  
„ Reverse polarity protection  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1][2]  
IF  
forward current  
-
-
250  
mA  
VR  
reverse voltage  
BAV102  
-
-
-
-
-
-
150  
200  
50  
V
BAV103  
V
[3]  
trr  
reverse recovery time  
ns  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[3] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.  

BAV102T/R 替代型号

型号 品牌 替代类型 描述 数据表
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