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BAV102 PDF预览

BAV102

更新时间: 2024-09-13 22:27:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管IOT
页数 文件大小 规格书
3页 27K
描述
High Voltage, General Purpose Diode

BAV102 数据手册

 浏览型号BAV102的Datasheet PDF文件第2页浏览型号BAV102的Datasheet PDF文件第3页 
BAV102  
General Description:  
A General Purpose diode that couples high forward  
conductance fast switching speed and high blocking  
voltages in a glass leadless LL-34 Surface Mount  
package.  
GREEN  
RED  
Placement of the Expansion Gap has no relationship to  
the location of the Cathode Terminal which is indicated  
by the first color band.  
Expansion Gap  
High Voltage,  
General Purpose Diode  
Absolute Maximum Ratings* TA = 25OC unless otherwise noted  
Sym  
Parameter  
Value  
Units  
Tstg  
TJ  
Storage Temperature  
-65 to +200  
-65 to +200  
500  
OC  
OC  
Operating Junction Temperature  
PD  
Total Power Dissipation at TA = 25OC  
Linear Derating Factor from TA = 25OC  
Thermal Resistance Junction-to-Ambient  
Working Inverse Voltage  
mW  
mW/OC  
OC/W  
V
3.33  
ROJA  
Wiv  
IO  
350  
150  
Average Rectified Current  
200  
mA  
IF  
DC Forward Current (IF)  
500  
mA  
if  
Recurrent Peak Forward Current  
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second  
Pulse Width = 1.0 microsecond  
600  
mA  
iF(surge)  
1.0  
Amp  
Amp  
4.0  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired  
Electrical Characteristics  
TA = 25OC unless otherwise noted  
SYM  
BV  
CHARACTERISTICS  
MIN  
MAX  
UNITS  
TEST CONDITIONS  
Breakdown Voltage  
Reverse Leakage  
200  
V
IR = 100 uA  
IR  
100  
100  
nA  
uA  
VR = 150 V  
VR = 150 V TA = 150OC  
VF  
Forward Voltage  
1.00  
1.25  
V
V
IF = 100 mA  
IF = 200 mA  
CT  
Capacitance  
5.0  
50  
pF  
ns  
VR  
=
0.0 V,f = 1.0 MHz  
TRR Reverse Recovery Time  
IF= IR 30 mA IRR= 1.0 mA  
RL = 100 Ohms  
© 1997 Fairchild Semiconductor Corporation  

BAV102 替代型号

型号 品牌 替代类型 描述 数据表
BAV102,115 NXP

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