Datasheet > BAV101-13

BAV101-13

更新时间： 2024-10-27 03:29:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	46K
描述
Rectifier Diode, 1 Element, 0.125A, 120V V(RRM), Silicon, GLASS, MINIMELF-2

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数据手册

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BAV101-13 数据手册

BAV101 - BAV103

SURFACE MOUNT SWITCHING DIODE

SPICE MODELS: BAV101 BAV102 BAV103

Features

Fast Switching Speed

Surface Mount Package Ideally Suited for

Automatic Insertion

For General Purpose Switching Applications

High Conductance

Mechanical Data

MiniMELF

Case: MiniMELF, Glass

Terminals: Solderable per MIL-STD-202,

Method 208

Dim

Min

3.30

1.30

0.28

Max

3.70

1.60

0.50

Polarity: Cathode Band

Marking: Cathode Band Only

Weight: 0.05 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

BAV101

BAV102

BAV103

Unit

V_RRM

Repetitive Peak Reverse Voltage

120

200

250

V_RWM

V_R

Working Peak Reverse Voltage

DC Blocking Voltage

100

150

200

141

V_R(RMS)

I_FM

RMS Reverse Voltage

106

250

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

Non-Repetitive Peak Forward Surge Current @ t < 1.0s

Power Dissipation

I_O

125

I_FSM

1.0

P_d

500

K/W

°C

R_qJA

T_j, T_STG

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

300

-65 to +175

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Test Condition

I_F= 100mA

T_A= 25°C

_A= 100°C

V_FM

Maximum Forward Voltage

1.0

Maximum Peak Reverse Current

@ Rated DC Blocking Voltage

100

I_RM

V_R= 0, f = 1.0MHz

C_j

t_rr

Junction Capacitance

1.5

I_F= I_R= 30mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Notes:

1. Valid provided that electrodes are kept at ambient temperature.

DS12017 Rev. J-2

1 of 2

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BAV101-BAV103

ã Diodes Incorporated

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