Datasheet > BAV102

BAV102

更新时间： 2024-09-14 06:41:31

品牌	Logo	应用领域
商升特 - SEMTECH		二极管 IOT 局域网
页数	文件大小	规格书
2页	249K
描述
SILICON EPITAXIAL PLANAR DIODES

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数据手册

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BAV102 数据手册

BAV101~BAV103

SILICON EPITAXIAL PLANAR DIODES

High Voltage General Purpose Diodes

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RRM

Value

Unit

Repetitive Peak Reverse Voltage

BAV101

BAV102

BAV103

120

200

250

Reverse Voltage

BAV101

BAV102

BAV103

100

150

200

V_R

Continuous Forward Current

I_F

250

625

Repetitive Peak Forward Current

I_FRM

Non-repetitive Peak Forward Surge Current

at t = 100 µs

at t = 1 s

I_FSM

Total Power Dissipation

P_tot

R_θJA

T_j

400

300

K/W

Thermal Resistance, Junction to Ambient

Junction Temperature

175

Storage Temperature Range

T_stg

- 65 to + 175

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

Unit

Forward Voltage

at I_F= 100 mA

at I_F= 200 mA

1.25

Reverse Current

at V_R= 100 V

at V_R= 150 V

at V_R= 200 V

at V_R= 100 V, T_j= 150 C

at V_R= 150 V, T_j= 150 C

BAV101

BAV102

BAV103

BAV101

BAV102

BAV103

100

µA

I_R

at V_R= 200 V, T_j= 150 C

Diode Capacitance

at f = 1 MHz, V_R= 0

C_d

t_rr

Reverse Recovery Time

at I_F= I_R= 30 mA, I_rr= 3 mA, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 22/11/2008

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与BAV102相关器件

型号	品牌	获取价格	描述	数据表
BAV102,115	NXP	获取价格	BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin
BAV102/D1	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, GLASS, MINIMELF-2
BAV102/D2	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, GLASS, MINIMELF-2
BAV102/T1	ETC	获取价格	DIODE GENERAL PURPOSE
BAV102_10	NXP	获取价格	Single general-purpose switching diodes
BAV102-13	DIODES	获取价格	Rectifier Diode, 1 Element, 0.125A, 200V V(RRM), Silicon, GLASS, MINIMELF-2
BAV102GS08	TEMIC	获取价格	Rectifier Diode, 1 Element, 0.25A, 200V V(RRM), Silicon,
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