5秒后页面跳转
BAV101 PDF预览

BAV101

更新时间: 2024-10-26 06:41:31
品牌 Logo 应用领域
TSC 二极管开关高压
页数 文件大小 规格书
2页 89K
描述
500mW Hermetically Sealed Glass High Voltage Switching Diodes

BAV101 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-LELF-R2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.63Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

BAV101 数据手册

 浏览型号BAV101的Datasheet PDF文件第2页 
BAV100/101/102/103  
500mW Hermetically Sealed Glass  
High Voltage Switching Diodes  
MINI MELF  
RoHS  
Pb  
COMPLIANCE  
Features  
—
—
—
—
—
—
High Voltage Switching Device  
Mini Melf package  
Surface device type mounting  
Hermetically sealed glass  
Compression bonded construction  
All external surface are corrosion resistant  
and leads are readily solderable  
RoHS compliant  
Dimensions in inches and (millimeters)  
—
—
—
Matte Tin (Sn) lead finish  
Color band indicates Negative Polarity  
Maximum Ratings and Electrical Characteristics  
Rating at 25oCambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Maximum Ratings  
Type Number  
Symbol  
Value  
Units  
Repetitive Peak Reverse Voltage  
VRRM  
250  
V
Average Rectified Forward Current  
Non- Repetitive Peak Forward Surge Current  
Pulse Width =1.0 Second  
IF(AV)  
IFSM  
200  
mA  
A
1.0  
4.0  
Pulse Width = 1.0 usecond  
Power Dissipation  
Pd  
TJ, TSTG  
500  
-65 to + 200  
mW  
OC  
Operating and Storage Temperature Range  
Electrical Characteristics  
Type Number  
Symbol  
Min  
Max  
Units  
Breakdown Voltage  
BAV100 IR=100uA  
BAV101 IR=100uA  
BAV102 IR=100uA  
BAV103 IR=100uA  
IF= 100mA  
60  
120  
200  
250  
BV  
V
Forward Voltage  
Peak Reverse Current BAV100 VR=50V  
BAV101 VR=100V  
VF  
IR  
1.0  
100  
100  
100  
100  
350  
5.0  
V
nA  
-
BAV102 VR=150V  
BAV103 VR=200V  
oC/W  
pF  
nS  
RӨJA  
Cj  
trr  
Thermal Resistance, Junction to Ambient  
Junction Capacitance VR=0, f=1.0MHz  
Reverse Recovery Time (Note)  
-
-
50  
Notes: Reverse Recovery Test Conditions: IF=IR=30mA, Irr=3mA, RL=100Ω.  
Version: A07  

与BAV101相关器件

型号 品牌 获取价格 描述 数据表
BAV101/D1 VISHAY

获取价格

Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, GLASS, MINIMELF-2
BAV101/T3 NXP

获取价格

DIODE 0.25 A, 120 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN, Signal Dio
BAV101_09 PANJIT

获取价格

HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES
BAV101-13 DIODES

获取价格

Rectifier Diode, 1 Element, 0.125A, 120V V(RRM), Silicon, GLASS, MINIMELF-2
BAV10116 NXP

获取价格

DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
BAV10136 NXP

获取价格

DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
BAV10153 NXP

获取价格

DIODE 0.3 A, 60 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
BAV101GS08 TEMIC

获取价格

Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon,
BAV101-GS08 VISHAY

获取价格

Small Signal Switching Diodes, High Voltage
BAV101GS18 TEMIC

获取价格

Rectifier Diode, 1 Element, 0.25A, 120V V(RRM), Silicon,