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BAV101 PDF预览

BAV101

更新时间: 2024-10-26 03:21:19
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 小信号开关二极管
页数 文件大小 规格书
2页 46K
描述
SMALL SIGNAL SWITCHING DIODE

BAV101 数据手册

 浏览型号BAV101的Datasheet PDF文件第2页 
DATA SHEET  
BAV101~BAV103  
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES  
Unit : inch (mm)  
MINI-MELF/LL-34  
300 mWatts  
POWER  
VOLTAGE 120 to 250 Volts  
FEATURES  
• Fast switching Speed.  
• Surface Mount Package Ideally Suited For Automatic Insertion.  
• Silicon Epitaxal Planar Construction.  
• Both normal and Pb free product are available :  
Normal : 80~95% Sn, 5~20% Pb  
Pb free: 98.5% Sn above  
MECHANICALDATA  
.020(0.5)  
.012(0.3)  
.020(0.5)  
.012(0.3)  
• Case: Mini Melf, Glass  
.146(3.7)  
.130(3.3)  
Terminals: Solderable per MIL-STD-202E, Method 208  
• Polarity: Cathode Band  
• Marking: Cathode Band Only  
• Weight: 0.03 grams  
• Packing information  
T/R - 2.5K per 7" plastic Reel  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)  
PA R A M E TE R  
S YM B O L  
B AV 101  
100  
B AV 102  
150  
B AV 103  
U N ITS  
R everse Voltage  
V
R
200  
250  
V
V
P eak R everse Voltage  
V
R M  
120  
200  
200  
R ectified C urrent (A verage), H alf W ave R ectification w ith  
R esistive Load and f >=50 H z  
IO  
m A  
A
P eak Forw ard S urge C urrent, t=1.0s  
IFS M  
1.0  
P ow er D issipation D erate A bove at 25O  
M axim um Forw ard Voltage, IF = 100m A  
C
P
D
F
300  
m W  
V
V
1.0  
M axim um D C R everse C urrent at R ated D C B locking  
Voltage T  
25O  
IR  
0.1  
uA  
J
=
C
TypicalJunction C apacitance( N ote 1)  
M axim um R everse R ecovery (N ote 2)  
M axim um Therm alR esistance  
C J  
0.95  
pF  
ns  
T
R R  
75  
R θJA  
350  
O C / W  
O C  
O peration Junction S torage Tem perature R ange  
T
S TG  
-65 TO +175  
NOTE:  
1. CJ at VR=0, f=1MHZ  
2. From IF=10mA to IR=-1mA, VR=6Volts, RL=100  
PAGE . 1  
STAD-JUL.30.2004  

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