5秒后页面跳转
BAT85-TAP PDF预览

BAT85-TAP

更新时间: 2024-02-03 10:31:52
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 138K
描述
DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode

BAT85-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.25
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAT85-TAP 数据手册

 浏览型号BAT85-TAP的Datasheet PDF文件第2页浏览型号BAT85-TAP的Datasheet PDF文件第3页浏览型号BAT85-TAP的Datasheet PDF文件第4页 
BAT85  
Vishay Semiconductors  
VISHAY  
Schottky Diode  
Features  
• For general purpose applications.  
• This diode features low turn-on voltage. This  
device is protected by a PN junction guard ring  
against excessive voltage, such as electrostatic  
discharges  
• This diode is also available in the MiniMELF case  
with type designation BAS85.  
94 9367  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: 130 mg  
Packaging Codes/Options:  
TR / 10 k per 13 " reel (52 mm tape), 50 k/box  
TAP / 10 k per Ammo tape (52 mm tape), 50 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
BAT85  
BAT85-TR or BAT85-TAP  
-
Tape and Reel / Ammopack  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Part  
Symbol  
Value  
30  
Unit  
V
Continuous reverse voltage  
Forward continuous current  
Peak forward current  
V
R
1)  
T
= 25 °C  
I
mA  
mA  
mA  
mW  
amb  
F
200  
1)  
T
= 25 °C  
I
FM  
amb  
300  
1)  
Surge forward current  
Power dissipation  
t < 1 s, T  
= 25 °C  
I
FSM  
p
amb  
600  
1)  
T
= 65 °C  
P
tot  
amb  
200  
1)  
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
thJA  
430  
Junction temperature  
T
125  
°C  
°C  
j
Ambient operating temperature  
range  
T
- 65 to + 125  
amb  
Storage temperature range  
T
- 65 to + 150  
°C  
S
1)  
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature  
Document Number 85669  
Rev. 1.3, 31-Mar-04  
www.vishay.com  
1

与BAT85-TAP相关器件

型号 品牌 获取价格 描述 数据表
BAT85-TP MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
BAT85-TP-TP MCC

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
BAT85-TR VISHAY

获取价格

DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode
BAT86 NXP

获取价格

Schottky barrier diode
BAT86 VISHAY

获取价格

Schottky Diodes
BAT86 MCC

获取价格

SMALL SIGNAL SCHOTTKY DIODES
BAT86 GOOD-ARK

获取价格

Small-Signal Diode
BAT86 LGE

获取价格

Small Signal Schottky Diodes
BAT86 LUNSURE

获取价格

SMALL SIGNAL SCHOTTKY DIODES
BAT86 NEXPERIA

获取价格

Schottky barrier single diodeProduction