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BAT86

更新时间: 2024-10-31 22:39:27
品牌 Logo 应用领域
美微科 - MCC 整流二极管小信号肖特基二极管
页数 文件大小 规格书
1页 160K
描述
SMALL SIGNAL SCHOTTKY DIODES

BAT86 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DO-35
包装说明:GLASS PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.38
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.3 V
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAT86 数据手册

  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
BAT86  
SMALL SIGNAL  
SCHOTTKY  
DIODES  
Features  
For general purpose applications  
These diodes features very low turn-on voltage and fast switching.  
These devices are protected by a PN junction guard ring against  
excessive voltage,such as electrostatic discharges.  
These diode is also available in the Mini-MELF case with type  
designation LL86  
Metal-on-silicon Schottky barrier device which is protected by a PN  
junction guard ring. The low forward voltage drop and fast switching  
ꢀꢁꢂꢃꢄ  
make it ideal for protection of MOS devices,and low logic applications.  
MECHANICAL DATA  
ꢂꢁꢀꢆꢅꢄꢌꢍꢁꢃꢇ  
ꢉꢎꢏ  
Case: Do-35 glass case  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.13 gram  
ꢀꢁꢀꢍꢐꢄꢌꢁꢀꢇ  
ꢉꢊꢋ  
ꢑꢎꢊ  
ꢀꢁꢂꢃꢀꢄꢅꢁꢆꢇ  
ꢈꢈꢈꢈꢉꢊꢋ  
ABSOLUTE RATINGS(LIMITING VALUES)  
Symbols Value  
Units  
Repetitive Peak Reverse Voltage  
VR  
50  
V
Forward Continuous Current at T =250C  
IF  
200  
300  
mA  
mA  
1)  
ꢂꢁꢀꢆꢅꢄꢌꢍꢁꢃꢇ  
ꢉꢎꢏ  
=250C IFRM  
1)  
Repetitive Peak Forward Current at t<1s,ä< 0.5,T  
A
ꢀꢁꢀꢌꢀꢄꢀꢁꢃꢌꢇ  
ꢉꢊꢋ  
ꢑꢎꢊ  
=650C  
P
200  
125  
mW  
1)  
Power Dissipation at T  
Junction temperature  
A
tot  
TJ  
0C  
0C  
0C  
Dime nsions in inc he s a nd (millime te rs)  
Ambient Operating temperature Range  
Storage Temperature Range  
TA  
-55~+125  
-55~+150  
TSTG  
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
µ
Re ve rse b re a kd own vo lta g e Te ste d with 10 A p ulse s  
50  
V
V
V
V
V
V
(BR)R  
V
Forwa rd volta g e  
Pulse Te st t  
a t I = 0.1mA,  
a t I = 1mA,  
a t I  
p
µ δ  
300 s, 2%  
V
F
F
F
0.200  
0.272  
0.365  
0.460  
F
0.300  
0.380  
0.450  
0.600  
0.900  
F
V
V
F
= 10mA,  
F
a t I = 30mA,  
F
V
F
a t I = 100mA  
V
F
0.700  
0.2  
Le a ka g e c urre nt  
R
V = 25V  
0.5  
8
µ
A
IR  
p F  
R
Junc tion Ca p a c ita nc e a t V = 1V ,f= 1MHz  
J
C
Re ve rse re c o ve ry time Form I  
F
= 10mA,I = 10mA,I = 1mA  
R
R
ns  
5
trr  
300 ꢀꢁ  
The rma l re sista nc e junc tion to a mb ie nt Air  
K/W  
JA  
R
θ
1) Va lid p ro vid e d tha t le a d s a t a d ista nc e of 4mm from c a se a re ke p t a t a mb ie nt te mp e ra ture (DO-35)  
www.mccsemi.com  

BAT86 替代型号

型号 品牌 替代类型 描述 数据表
BAT86-TR VISHAY

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