Datasheet > BAT86

BAT86

更新时间： 2023-12-06 20:03:16

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Schottky Barrier Rectifiers

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SCHOTTKY BARRIER DIODE

BAT86

DO - 35 Glass

(DO-204AH)

FEATURES :

• For general purpose applications.

• This diode features low turn-on voltage. This

device is protected by a PN junction guard ring

against excessive voltage, such as electrostatic

discharges.

1.00 (25.4)

0.079(2.0 )max.

min.

• Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring. The low

forward voltage drop and fast switching make it

ideal for protection of MOS devices, steering,

biasing and coupling diodes for fast switching and

low logic level applications.

0.150 (3.8)

Cathode

max.

Mark

1.00 (25.4)

• This diode is also available in the MiniMELF case

with type designation BAS86.

0.020 (0.52)max.

min.

• Pb / RoHS Free

MECHANICAL DATA :

Case: DO-35 Glass Case

Weight: approx. 0.13g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

Value

Unit

V_R

I_F

Continuous Reverse Voltage

200⁽¹⁾

500⁽¹⁾

200⁽¹⁾

°C/W

°C

Continuous Forward Current

I_F(AV)

I_FRM

P_D

Average forward current , Ta = 50 °C

Repetitive Peak Forward Current at tp < 1s,

Power Dissipation

300⁽¹⁾

Thermal Resistance Junction to Ambient Air

Junction Temperature

R_q

T_J

125

Ambient Operating Temperature Range

Storage temperature range

T_S

-65 to + 125

-65 to + 150

°C

Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min

Typ

Max

Unit

Parameter

Reverse Breakdown Voltage

Symbol

V_(BR)R

I_R

I_R= 10 mA (pulsed)

V_R= 40 V

Reverse Current

0.3

5.0

I_F= 1mA

I_F= 10mA

I_F= 30mA

I_F= 100mA

V_R= 1V, f = 1MHz

0.275

0.365

0.460

0.700

0.380

0.450

0.600

0.900

Forward Voltage

Pulse Test tp <300ms , d <2%

V_F

Diode Capacitance

Trr

I_F=10mA to I_R= 10mA ,

to I_R= 1mA

Reverse Recovery Time

Page 1 of 1

Rev. 02 : March 24, 2005

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