BAT86

更新时间： 2024-10-31 22:39:27

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
2页	47K
描述
Schottky Diodes

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BAT86

Schottky Diodes

FEATURES

DO-35

For general purpose applications.

♦

This diode features low turn-on volt-

age. The devices are protected by a PN

junction guard ring against excessive volt-

age, such as electrostatic discharges.

max. .079 (2.0)

♦

Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring. The low for-

ward voltage drop and fast switching make it ideal

for protection of MOS devices, steering, biasing and

coupling diodes for fast switching and low logic level

applications.

Cathode

Mark

max. .020 (0.52)

This diode is also available in the Mini-MELF case

with the type designation BAS86.

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: DO-35 Glass Case

Weight: approx. 0.13 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

ambient temperature unless otherwise specified

25 °C

Symbol

V_R

Min.

Max.

Unit

Continuous Reverse Voltage

–

Forward Continuous Current at T_amb= 25 °C

I_F

200¹⁾

500¹⁾

Repetitive Forward Current

I_FRM

at t_p< 1 s, υ ≤ 0.5, T_amb= 25 °C

Power Dissipation at T_amb= 25 °C

Junction Temperature

P_tot

T_j

–

200¹⁾

125

°C

–

Ambient Operating Temperature Range

Storage Temperature Range

–65

+125

+150

°C

amb

T_S

°C

¹⁾Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.

5/98

222

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