Datasheet > BAS52_07

BAS52_07

更新时间： 2024-02-07 10:40:24

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
7页	73K
描述
Silicon Schottky Diode

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BAS52_07 数据手册

BAS52...

Silicon Schottky Diode

• Medium current rectifier Schottky diode

• Low forward voltage at 200mA

• High reverse voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAS52-02V

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BAS52-02V

Package

Configuration

Marking

SC79

single

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

Forward current

750

Average rectified forward current (50/60Hz, sinus) I

500

FAV

Non-repetitive peak surge forward current

t = 100 µs

2000

FSM

500

°C

Total power dissipation

tot

T ≤ 110°C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 60

thJS

¹Pb-containing package may be available upon special request

²For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-04-19

12 3 4 5 6 7

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