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BAS40SL_10 PDF预览

BAS40SL_10

更新时间: 2024-10-29 12:51:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
4页 108K
描述
Schottky Barrier Diodes

BAS40SL_10 数据手册

 浏览型号BAS40SL_10的Datasheet PDF文件第2页浏览型号BAS40SL_10的Datasheet PDF文件第3页浏览型号BAS40SL_10的Datasheet PDF文件第4页 
October 2010  
BAS40SL  
Schottky Barrier Diodes  
Features  
• Low Forward Voltage Drop  
• Fast switching  
• Very Small and Thin SMD package  
• Profile height, 0.43mm max  
Footprint, 1.0 x 0.6mm  
Connection Diagram  
1
2
2
1
SOD-923F  
Marking: AA  
Absolute Maximum Ratings * TA = 25°C unless otherwise noted  
Symbol  
VRRM  
IF(AV)  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
40  
Unit  
V
100  
mA  
mA  
IFSM  
Forward Surge Current  
600  
(8.3mS Single Half Sine-Wave)  
PD  
Power Dissipation  
227  
mW  
TJ, TSTG  
Operating Junction & Storage Temperature Range  
-55 to +150  
°C  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Unit  
RθJA  
Thermal Resistance, Junction to Ambient *  
550  
°C/W  
* Minimum land pad.  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
VR  
Parameter  
Breakdown Voltage  
Forward Voltage  
Test Conditions  
IR = 10μA  
Min.  
Max.  
Unit  
40  
V
VF  
IF = 1mA  
IF = 40mA  
380  
1000  
mV  
mV  
IR  
trr  
Cj  
Reverse Leakage  
VR = 30V  
0.2  
8.0  
5.0  
μA  
nS  
pF  
Reverse Recovery Time IF = IR= 10mA, irr = 0.1IR  
Junction Capacitance  
VR = 0, f = 1.0MHz  
© 2010 Fairchild Semiconductor Corporation  
BAS40SL Rev. A2  
www.fairchildsemi.com  
1

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