Datasheet > BAS40T_08

BAS40T_08

更新时间： 2024-10-29 08:48:27

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
3页	116K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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BAS40T_08 数据手册

BAS40T /-04T /-05T /-06T

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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Features

Mechanical Data

•

Low Forward Voltage Drop

Fast Switching

Ultra-Small Surface Mount Package

PN Junction Guard Ring for Transient and ESD Protection

Lead, Halogen and Antimony Free, RoHS Compliant "Green"

Device (Notes 3, 4 and 5)

•

Case: SOT-523

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Polarity: See Diagrams Below

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.002 grams (approximate)

Top View

BAS40T

BAS40-04T

BAS40-05T

BAS40-06T

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Symbol

V_RRM

V_RWM

V_R

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

(Note 1)

200

600

Non-Repetitive Peak Forward Surge Current

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation

Symbol

P_D

Value

150

Unit

°C/W

°C

(Note 1)

Thermal Resistance Junction to Ambient

Operating Temperature Range

Storage Temperature Range

833

R_θ

-55 to +125

-65 to +150

T_J

T_STG

°C

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Symbol

V_(BR)R

Min

Max

⎯

380

1000

Unit

Test Condition

I_R= 10μA

(Note 2)

I_F= 1.0mA, t_p< 300μs

I_F= 40mA, t_p< 300μs

V_R= 30V

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

Forward Voltage

V_F

⎯

Leakage Current

Total Capacitance

200

5.0

I_R

C_T

⎯

Reverse Recovery Time

5.0

t_rr

⎯

I_rr= 0.1 x I_R, R_L= 100Ω

Notes:

1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb₂O₃Fire Retardants.

1 of 3

www.diodes.com

July 2008

BAS40T /-04T /-05T /-06T

Document number: DS30265 Rev. 13 - 2

12 3

中文翻译

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与BAS40T_08相关器件

型号	品牌	获取价格	描述	数据表
BAS40T_09	SECOS	获取价格	Surface Mount Schottky Barrier Rectifiers
BAS40T_1	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40T-04-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-04-7	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-04T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40T-04T	TYSEMI	获取价格	Low Forward Voltage Drop, Ultra-Small Surface Mount Package
BAS40T-05-13	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-05-7	DIODES	获取价格	Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-05T	TYSEMI	获取价格	Low Forward Voltage Drop, Ultra-Small Surface Mount Package
BAS40T-05T	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE

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