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BAS40T-04-7 PDF预览

BAS40T-04-7

更新时间: 2024-10-30 03:22:27
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
2页 51K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon

BAS40T-04-7 数据手册

 浏览型号BAS40T-04-7的Datasheet PDF文件第2页 
BAS40T/-04/-05/-06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
Low Forward Voltage Drop  
SOT-523  
Fast Switching  
Dim Min Max Typ  
TOP VIEW  
Ultra-Small Surface Mount Package  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
PN Junction Guard Ring for Transient and ESD  
Protection  
B
C
¾
¾
0.50  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
Mechanical Data  
A
G
H
·
·
Case: SOT-523, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
K
L
·
·
·
·
Polarity: See Diagram  
K
J
M
N
M
N
Marking: See Diagram  
Weight: 0.002 grams (approx.)  
Ordering Information, see Sheet 2  
D
L
All Dimensions in mm  
BAS40T-06 Marking: 46  
BAS40T-05 Marking: 45  
BAS40T Marking: 43  
BAS40T-04 Marking: 44  
@ T = 25°C unless otherwise specified  
A
Maximum Ratings  
Characteristic  
Symbol  
BAS40T  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
VR(RMS)  
IFM  
IFSM  
Pd  
RMS Reverse Voltage  
28  
200  
V
mA  
mA  
mW  
°C/W  
°C  
Forward Continuous Current  
Non-Repetitive Peak Forward Surge Current @ t = 1.0s  
Power Dissipation (Note 1)  
600  
150  
RqJA  
Tj  
Thermal Resistance Junction to Ambient (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
833  
-55 to +125  
-65 to +150  
TSTG  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
40  
¾
V
IR = 10mA  
IF = 1.0mA, tp < 300ms  
IF = 40mA, tp < 300ms  
380  
1000  
mV  
mV  
VF  
Forward Voltage (Note 2)  
¾
VR = 30V  
IR  
Cj  
Leakage Current (Note 2)  
Junction Capacitance  
¾
¾
200  
5.0  
nA  
pF  
VR = 0, f = 1.0MHz  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
¾
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout.  
2. Short duration pulse test to minimize self-heating effect.  
DS30265 Rev. C-2  
1 of 2  
BAS40T/-04/-05/-06  

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