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BAS40T-04T

更新时间： 2024-11-25 22:08:19
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
2页 162K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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BAS40T-04T 数据手册

 浏览型号BAS40T-04T的Datasheet PDF文件第2页 
BAS40T/-04T/-05T/-06T  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
Low Forward Voltage Drop  
Fast Switching  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and ESD  
Protection  
SOT-523  
Dim Min Max Typ  
A
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
C
C
B
TOP VIEW  
Mechanical Data  
¾
¾
0.50  
E
B
·
·
·
·
Case: SOT-523, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202, Method  
208  
Polarity: See Diagrams Below  
Marking: See Diagrams Below (& Page 2)  
Weight: 0.002 grams (approx.)  
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
G
H
K
M
N
K
L
J
L
D
·
·
·
·
M
N
a
0°  
8°  
¾
Ordering Information, see Page 2  
All Dimensions in mm  
BAS40-05T Marking: 45  
BAS40-06T Marking: 46  
BAS40T Marking: 43  
BAS40-04T Marking: 44  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
VR(RMS)  
IFM  
RMS Reverse Voltage  
28  
200  
V
mA  
mA  
mW  
°C/W  
°C  
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ t = 1.0s  
Power Dissipation (Note 1)  
IFSM  
Pd  
600  
150  
R
qJA  
Thermal Resistance Junction to Ambient (Note 1)  
Operating Temperature Range  
833  
Tj  
-55 to +125  
-65 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 10mA  
40  
¾
V
IF = 1.0mA, tp < 300ms  
IF = 40mA, tp < 300ms  
380  
1000  
mV  
mV  
VF  
Forward Voltage (Note 2)  
¾
VR = 30V  
IR  
Leakage Current (Note 2)  
Total Capacitance  
¾
¾
200  
5.0  
nA  
pF  
VR = 0, f = 1.0MHz  
CT  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
¾
5.0  
ns  
Notes:  
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30265 Rev. 5 - 2  
1 of 2  
BAS40T/-04T/-05T/-06T  
12

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