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BAS40TGP PDF预览

BAS40TGP

更新时间: 2024-10-29 13:05:51
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力勤 - CHENMKO 肖特基二极管
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BAS40TGP 数据手册

 浏览型号BAS40TGP的Datasheet PDF文件第2页 
CHENMKO ENTERPRISE CO.,LTD  
BAS40ADWPT  
SURFACE MOUNT  
SCHOTTKY DIODE ARRAY  
VOLTAGE 40 Volts CURRENT 0.2 Ampere  
APPLICATION  
* Ultra high speed switching  
FEATURE  
* Small surface mounting type. (SC-88/SOT-363)  
* High speed. (TRR=2.5nSec Typ.)  
SC-88/SOT-363  
* Suitable for high packing density.  
* Maximum total power disspation is 200mW.  
* Peak forward current is 300mA.  
(1)  
(3)  
(6)  
* Schottky diode array ( Dual common anode ).  
0.65  
0.65  
1.3±0.1  
0.2±  
2.0±0.2  
CONSTRUCTION  
* Silicon epitaxial planar  
WEIGHT  
(4)  
0.1  
0.05  
1.25±0.1  
* 0.008 grams ( Approx.)  
MARKING  
* AD2  
0.15±0.05  
0.1 Min.  
0.9±0.1  
0.7±0.1  
0~0.1  
6
4
3
2.3±0.15  
CIRCUIT  
SC-88/SOT-363  
Dimensions in millimeters  
1
RATINGS  
SYMBOL  
BAS40ADWPT  
UNITS  
Volts  
Volts  
Volts  
Amps  
Amps  
pF  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
IO  
40  
28  
Maximum DC Blocking Voltage  
40  
0.2  
Maximum Average Forward Rectified Current  
Peak Forward Surge Current at 1Sec.  
IFSM  
0.6  
Typical Junction Capacitance between Terminal (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Maximum Operating Temperature Range  
CJ  
TRR  
TJ  
5.0  
5.0  
nSec  
oC  
-55 to +125  
oC  
Storage Temperature Range  
TSTG  
-65 to +150  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Maximum Instantaneous Forward Voltage  
Maximum Average Reverse Current at VR= 30V  
SYMBOL  
UNITS  
mVolts  
BAS40ADWPT  
@IF= 1.0mA  
@IF= 40mA  
380  
1000  
200  
VF  
IR  
nAmps  
2003-01  
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0.0 volts.  
2. Measured at applied froward current of 10mA and reverse current of 10mA.  
3. ESD sensitive product handling required.  

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