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BAS40SW-T1-LF PDF预览

BAS40SW-T1-LF

更新时间: 2024-10-29 19:44:51
品牌 Logo 应用领域
WTE 光电二极管
页数 文件大小 规格书
4页 70K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BAS40SW-T1-LF 数据手册

 浏览型号BAS40SW-T1-LF的Datasheet PDF文件第2页浏览型号BAS40SW-T1-LF的Datasheet PDF文件第3页浏览型号BAS40SW-T1-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
BAS40W / AW / CW / SW  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
Low Turn-on Voltage  
L
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
A
Designed for Surface Mount Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
B
C
M
E
D
SOT-323  
Min  
H
G
Dim  
A
Max  
0.40  
1.35  
2.20  
0.30  
Mechanical Data  
B
1.15  
Case: SOT-323, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
K
C
2.00  
D
0.65 Nominal  
J
E
0.30  
1.20  
1.80  
0.40  
1.40  
2.20  
0.10  
1.10  
G
H
Polarity: See Diagrams Below  
Weight: 0.006 grams (approx.)  
Marking: Device Code, See Page 3  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
J
K
0.90  
0.25  
0.05  
L
M
0.15  
All Dimensions in mm  
TOP VIEW  
TOP VIEW  
TOP VIEW  
TOP VIEW  
BAS40W  
BAS40AW  
BAS40CW  
BAS40SW  
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25°C unless otherwise specified  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
40  
V
Forward Continuous Current (Note 1)  
Forward Surge Current (Note 1)  
Power Dissipation (Note 1)  
IF  
IFSM  
200  
600  
mA  
mA  
@ t < 1.0s  
Pd  
200  
mW  
°C/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RθJA  
Tj, TSTG  
625  
-55 to +150  
Note: 1. Device on fiberglass substrate.  
BAS40W / AW / CW / SW  
1 of 4  
© 2006 Won-Top Electronics  

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