5秒后页面跳转
BAS40T PDF预览

BAS40T

更新时间: 2024-10-29 06:41:27
品牌 Logo 应用领域
SECOS 肖特基二极管光电二极管
页数 文件大小 规格书
2页 349K
描述
Surface Mount Schottky Barrier Rectifiers

BAS40T 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:ROHS COMPLIANT PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.56
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最大输出电流:0.07 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.15 W最大重复峰值反向电压:70 V
最大反向恢复时间:0.005 µs表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAS40T 数据手册

 浏览型号BAS40T的Datasheet PDF文件第2页 
BAS40T/-04T/-05T/06T  
VOLTAGE 40 V, 200 mA  
Surface Mount Schottky Barrier Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-523  
Min  
Dim  
A
Max  
A
L
1.50  
0.78  
0.80  
0.28  
0.90  
0.00  
0.10  
0.35  
0.49  
1.50  
1.70  
FEATURES  
3.  
B
0.82  
0.82  
z Low Turn-on voltage  
z Fast switching  
C
1.  
3
2.  
S
B
Top View  
D
0.32  
1.10  
0.10  
0.20  
0.41  
0.51  
1.70  
2
1
G
H
D
J
G
K
J
C
L
K
S
H
All Dimension in mm  
BAS40T Marking: 43  
BAS40-04T Marking: 44  
BAS40-05T Marking: 45  
BAS40-06T Marking: 46  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25°C ambient temperature unless otherwise specified.  
TYPE NUMBER  
SYMBOL  
VALUES  
UNITS  
Peak Repetitive Peak reverse voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
40  
V
Forward Continuous Current  
Non-Repetitive Peak Forward Surge Current @ t =  
1.0s  
IFM  
200  
0.6  
mA  
A
IFSM  
Average Rectified Output Current  
Power Dissipation  
Thermal Resistance Junction to Ambient Air  
Storage temperature  
IO  
PD  
RθJA  
TSTG  
200  
150  
833  
mA  
mW  
/W  
125, -65~125  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25°C ambient temperature unless otherwise specified.  
PARAMETERS  
SYMBOL  
TEST CONDITIONS  
MIN  
MAX UNITS  
Reverse breakdown voltage  
V(BR)R  
IR= 10µA  
IF=1mA  
IF=40mA  
40  
V
380  
1000  
Forward voltage  
VF  
V
Reverse voltage leakage current  
Diode capacitance  
IR  
CD  
VR=30V  
0.2  
5
μA  
VR=0, f=1MHz  
IF=IR=10mA,Irr=0.1xIR,  
RL=100  
pF  
Reveres recovery time  
trr  
5
nS  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
25-Sept-2008 Rev. B  
Page 1 of 2  

与BAS40T相关器件

型号 品牌 获取价格 描述 数据表
BAS40T_08 DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40T_09 SECOS

获取价格

Surface Mount Schottky Barrier Rectifiers
BAS40T_1 DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40T-04-13 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-04-7 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-04T DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40T-04T TYSEMI

获取价格

Low Forward Voltage Drop, Ultra-Small Surface Mount Package
BAS40T-05-13 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-05-7 DIODES

获取价格

Rectifier Diode, Schottky, 2 Element, 0.2A, 40V V(RRM), Silicon
BAS40T-05T TYSEMI

获取价格

Low Forward Voltage Drop, Ultra-Small Surface Mount Package