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BAS40T PDF预览

BAS40T

更新时间: 2024-10-30 13:48:15
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 171K
描述
Tape : 3K/Reel, 120K/Ctn;

BAS40T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT
包装说明:R-PDSO-G3针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.8Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
最大功率耗散:0.15 W认证状态:Not Qualified
最大反向恢复时间:0.005 µs表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS40T 数据手册

 浏览型号BAS40T的Datasheet PDF文件第2页浏览型号BAS40T的Datasheet PDF文件第3页 
M C C  
BAS40-04T  
BAS40-05T  
BAS40-06T  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Pow Dissipation PD=150mW Tamb=25R  
Forward Current IF=200mA  
Reverse Voltage VR=40V  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
150mW 40Volt  
Plastic-Encapsulate  
Diode  
·
·
Maximum Ratings  
SOT-523  
Operating Temperature: -65R to +150R  
Storage Temperature: -65R to +150R  
A
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
B
Reverse Breakdown  
Voltage  
V(BR)R  
40V  
IR=10µA  
E
Maximum  
Instantaneous  
Forward Voltage  
380mV IFM = 1mA;  
H
G
J
VF  
1000mV  
IFM = 40mA;  
K
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
DIMENSIONS  
INCHES  
IR  
200nA  
VR=30Volts  
MM  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
.059  
.030  
.057  
MAX  
.067  
.033  
.069  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
Measured at  
1.0MHz, VR=0V  
.020 Nominal  
0.50Nominal  
0.90  
.000  
.70  
.100  
.25  
Total Capacitance  
CT  
5pF  
5nS  
.035  
.043  
.004  
.031  
.008  
.014  
1.10  
.000  
.028  
.004  
.010  
.100  
0.80  
.200  
.35  
IF=IR=10mA,  
Irr=1mA,RL=100Ā  
Reverse Recovery  
Time  
Trr  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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