BAS321J
High-voltage switching diode
23 March 2018
Product data sheet
1. General description
High-voltage switching diode in a very small SOD323F (SC-90) flat lead Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
•
High switching speed: trr ≤ 50 ns
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•
•
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Low leakage current: IR ≤ 100 nA
High reverse voltage VR ≤ 200 V
Low capacitance: Cd ≤ 2 pF
Very small SMD plastic package
AEC-Q101 qualified
3. Applications
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High-speed switching
General-purpose switching
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
IF
Parameter
Conditions
Min
Typ
Max
250
200
250
Unit
mA
V
forward current
reverse voltage
[1]
-
-
-
-
-
-
VR
VRRM
repetitive peak reverse
voltage
V
VF
forward voltage
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
-
-
1.25
V
IR
trr
reverse current
VR = 200 V; pulsed; Tj = 25 °C
-
-
-
-
100
50
nA
ns
reverse recovery time IF = 30 mA; IR = 30 mA; RL = 100 Ω;
IR(meas) = 3 mA; Tj = 25 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.