Datasheet > BAS21J-Q

BAS21J-Q

更新时间： 2024-11-06 11:13:27

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安世 - NEXPERIA		/
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描述
High-speed switching diodeProduction

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BAS21J-Q 数据手册

BAS21J-Q

Single high-speed switching diode

11 May 2023

Product data sheet

1. General description

High-speed switching diode, encapsulated in a SOD323F (SC-90) very small and flat lead Surface-

Mounted Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low capacitance: C_d≤2 pF

Low leakage current

Reverse voltage: V_R≤ 300 V

Repetitive peak reverse voltage: V_RRM≤ 300 V

Very small and flat lead SMD plastic package

Excellent coplanarity and improved thermal behavior

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

Voltage clamping

General-purpose switching

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

250

150

300

Unit

I_F

forward current

reverse current

reverse voltage

pulsed; t_p≤ 300 µs; δ ≤ 0.02

V_R= 250 V; T_amb= 25 °C

I_R

V_R

t_rr

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

anode

sym006

SC-90 (SOD323F)

12 3 4 5 6 7 8

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