Datasheet > BAS21LL

BAS21LL

更新时间： 2024-11-27 11:13:31

品牌	Logo	应用领域
安世 - NEXPERIA		二极管
页数	文件大小	规格书
12页	197K
描述
High-voltage switching diodeProduction

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BAS21LL 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.57	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

BAS21LL 数据手册

BAS21LL

High-voltage switching diode

27 February 2018

Product data sheet

1. General description

High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current: I_R≤ 100 nA

High reverse voltage V_R≤ 200 V

Low capacitance: C_d≤ 2 pF

Ultra small SMD plastic package

AEC-Q101 qualified

3. Applications

•

High-speed switching

General-purpose switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

330

200

250

Unit

forward current

reverse voltage

T_j= 25 °C

[1]

V_R

V_RRM

repetitive peak reverse

voltage

V_F

forward voltage

I_F= 200 mA; t_p≤ 300 µs; δ ≤ 0.02 ;

T_j= 25 °C

1.25

I_R

t_rr

reverse current

V_R= 200 V; pulsed; T_j= 25 °C

100

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_j= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...12

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