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BAS21QA

更新时间： 2024-11-19 11:12:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	213K
描述
High-voltage switching diodeProduction

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BAS21QA 数据手册

BAS21QA

High-voltage switching diode

9 April 2018

Product data sheet

1. General description

High-voltage switching diode, encapsulated in a leadless ultra small DFN1010D-3 (SOT1215)

Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current: I_R≤ 100 nA

High reverse voltage: V_R≤ 200 V

Low capacitance: C_d≤ 2 pF

Ultra small and leadless SMD plastic package

Low package height of 0.37 mm

Suitable for Automatic Optical Inspection (AOI) of solder joint

AEC-Q101 qualified

3. Applications

•

High-speed switching

General-purpose switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

330

200

250

Unit

forward current

reverse voltage

T_j= 25 °C

[1]

V_R

V_RRM

repetitive peak reverse

voltage

V_F

forward voltage

I_F= 200 mA; t_p≤ 300 µs; δ ≤ 0.02;

T_j= 25 °C

1.25

I_R

t_rr

reverse current

V_R= 200 V; pulsed; T_j= 25 °C

100

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_j= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...11

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