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BAS21LT1 PDF预览

BAS21LT1

更新时间: 2024-01-20 04:35:18
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 整流二极管光电二极管
页数 文件大小 规格书
4页 70K
描述
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)

BAS21LT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:0.5
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.625 A元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAS21LT1 数据手册

 浏览型号BAS21LT1的Datasheet PDF文件第2页浏览型号BAS21LT1的Datasheet PDF文件第3页浏览型号BAS21LT1的Datasheet PDF文件第4页 
Order this document  
by BAS21LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
3
1
CATHODE  
ANODE  
3
MAXIMUM RATINGS  
Rating  
Continuous Reverse Voltage  
Peak Forward Current  
Symbol  
Value  
250  
Unit  
1
2
V
R
Vdc  
I
F
200  
mAdc  
mAdc  
CASE 31808, STYLE 8  
SOT23 (TO236AB)  
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
625  
FM(surge)  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
Derate above 25°C  
T = 25°C  
A
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
BAS21LT1 = JS  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Reverse Voltage Leakage Current  
I
R
µAdc  
(V = 200 Vdc)  
1.0  
100  
R
(V = 200 Vdc, T = 150°C)  
R
J
Reverse Breakdown Voltage  
(I = 100 µAdc)  
V
250  
Vdc  
mV  
(BR)  
BR  
Forward Voltage  
(I = 100 mAdc)  
V
F
1000  
1250  
F
(I = 200 mAdc)  
F
Diode Capacitance  
(V = 0, f = 1.0 MHz)  
R
C
5.0  
pF  
ns  
D
Reverse Recovery Time  
t
rr  
50  
(I = I = 30 mAdc, R = 100 )  
F
R
L
1. FR5 = 1.0  
0.75 0.062 in.  
2. Alumina = 0.4  
0.3  
0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

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