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BAS21PG PDF预览

BAS21PG

更新时间: 2024-11-19 11:12:55
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管
页数 文件大小 规格书
13页 680K
描述
Dual isolated high-voltage switching diodeProduction

BAS21PG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.45配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:5最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.225 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.255 W
参考标准:AEC-Q101; IEC-60134最大重复峰值反向电压:250 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAS21PG 数据手册

 浏览型号BAS21PG的Datasheet PDF文件第2页浏览型号BAS21PG的Datasheet PDF文件第3页浏览型号BAS21PG的Datasheet PDF文件第4页浏览型号BAS21PG的Datasheet PDF文件第5页浏览型号BAS21PG的Datasheet PDF文件第6页浏览型号BAS21PG的Datasheet PDF文件第7页 
BAS21PG  
Dual isolated high-voltage switching diode  
9 June 2015  
Product data sheet  
1. General description  
Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A)  
Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
High switching speed: trr ≤ 50 ns  
Low leakage current  
Reverse voltage VR ≤ 250 V  
Low capacitance: Cd ≤ 2 pF  
Very small SMD plastic package  
AEC-Q101 qualified  
3. Applications  
High-speed switching at high voltage  
High-voltage general-purpose switching  
Voltage clamping  
Reverse polarity protection  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
IF  
forward current  
reverse voltage  
Tj = 25 °C; single diode loaded  
Tj = 25 °C  
-
-
-
-
225  
250  
mA  
V
VR  
Per diode  
IR  
trr  
reverse current  
VR = 200 V; Tj = 25 °C  
-
-
25  
-
100  
50  
nA  
ns  
reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;  
RL = 100 Ω; Tj = 25 °C  
 
 
 
 

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