Datasheet > BAS21LD

BAS21LD

更新时间： 2024-11-27 11:12:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	209K
描述
High-voltage switching diodeProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAS21LD 数据手册

BAS21LD

High-voltage switching diode

28 February 2018

Product data sheet

1. General description

High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D)

Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current: I_R≤ 100 nA

High reverse voltage V_R≤ 200 V

Low capacitance: C_d≤ 2 pF

Ultra small and leadless SMD plastic package

Soldarable side pads

Package height typ. 0.37 mm

AEC-Q101 qualified

3. Applications

•

High-speed switching

General-purpose switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

330

200

250

Unit

forward current

reverse voltage

T_j= 25 °C

[1]

V_R

V_RRM

repetitive peak reverse

voltage

V_F

forward voltage

I_F= 200 mA; t_p≤ 300 µs; δ ≤ 0.02 ;

T_j= 25 °C

1.25

I_R

t_rr

reverse current

V_R= 200 V; pulsed; T_j= 25 °C

100

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_j= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...12

中文翻译

下载PDF

与BAS21LD相关器件

型号	品牌	获取价格	描述	数据表
BAS21LDYL	ETC	获取价格	BAS21LD/SOD882/SOD2
BAS21LL	NEXPERIA	获取价格	High-voltage switching diodeProduction
BAS21LL-Q	NEXPERIA	获取价格	High-voltage switching diodeProduction
BAS21LLYL	ETC	获取价格	BAS21LL/SOD882/SOD2
BAS21LS	NEXPERIA	获取价格	High-speed switching diodeDevelopment
BAS21LS-Q	NEXPERIA	获取价格	High-speed switching diodeProduction
BAS21LT1	LRC	获取价格	High Voltage Switching Diode
BAS21LT1	MOTOROLA	获取价格	CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
BAS21LT1	ONSEMI	获取价格	High Voltage Switching Diode
BAS21LT1G	ONSEMI	获取价格	High Voltage Switching Diode