Datasheet > BAS21HT1_10

BAS21HT1_10

更新时间： 2024-11-23 08:48:23

品牌	Logo	应用领域
安森美 - ONSEMI		二极管开关高压
页数	文件大小	规格书
4页	84K
描述
High Voltage Switching Diode

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中文翻译

获取价格

数据手册

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BAS21HT1_10 数据手册

BAS21HT1

High Voltage

Switching Diode

Features

• Pb−Free Packages are Available

http://onsemi.com

HIGH VOLTAGE

SWITCHING DIODE

MAXIMUM RATINGS

Symbol

Rating

Value

250

Unit

Vdc

Continuous Reverse Voltage

Repetitive Peak Reverse Voltage

Peak Forward Current

CATHODE

ANODE

250

Vdc

RRM

200

mAdc

Peak Forward Surge Current

625

FM(surge)

MARKING

DIAGRAM

THERMAL CHARACTERISTICS

Symbol

Characteristic

Max

Unit

Total Device Dissipation FR−5 Board,

200

SOD−323

CASE 477

STYLE 1

(Note 1)

T = 25°C

JS M G

Derate above 25°C

1.57

635

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

= Device Code

= Date Code*

= Pb−Free Package

T , T

Junction and Storage Temperature

Range

−55 to +150

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 Minimum Pad

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

BAS21HT1

BAS21HT1G

Package

Shipping

SOD−323

3000/Tape & Reel

SOD−323

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

July, 2010 − Rev. 5

BAS21HT1/D

12 3 4

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