5秒后页面跳转
BAS21HT1G PDF预览

BAS21HT1G

更新时间: 2024-11-06 02:54:31
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关高压
页数 文件大小 规格书
3页 46K
描述
High Voltage Switching Diode

BAS21HT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:LEAD FREE, CASE 477-02, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:1 week
风险等级:0.64配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.625 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAS21HT1G 数据手册

 浏览型号BAS21HT1G的Datasheet PDF文件第2页浏览型号BAS21HT1G的Datasheet PDF文件第3页 
BAS21HT1  
Preferred Device  
High Voltage  
Switching Diode  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
HIGH VOLTAGE  
SWITCHING DIODE  
MAXIMUM RATINGS  
Symbol  
Rating  
Value  
250  
Unit  
Vdc  
V
Continuous Reverse Voltage  
Repetitive Peak Reverse Voltage  
Peak Forward Current  
R
1
CATHODE  
2
ANODE  
V
250  
Vdc  
RRM  
I
200  
mAdc  
mAdc  
F
I
Peak Forward Surge Current  
625  
FM(surge)  
MARKING  
DIAGRAM  
THERMAL CHARACTERISTICS  
2
Symbol  
Characteristic  
Max  
Unit  
P
Total Device Dissipation FR−5 Board,  
200  
mW  
D
SOD−323  
CASE 477  
STYLE 1  
1
(Note 1) T = 25°C  
A
JS M G  
Derate above 25°C  
1.57  
635  
mW/°C  
°C/W  
G
R
q
Thermal Resistance,  
Junction−to−Ambient  
JA  
JS  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
T , T  
Junction and Storage Temperature  
Range  
−55 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−5 Minimum Pad  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
BAS21HT1  
BAS21HT1G  
Package  
Shipping  
SOD−323  
3000/Tape & Reel  
3000/Tape & Reel  
SOD−323  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 4  
BAS21HT1/D  
 

BAS21HT1G 替代型号

型号 品牌 替代类型 描述 数据表
BAS21HT3G ONSEMI

完全替代

High Voltage Switching Diode
BAS20HT1G ONSEMI

类似代替

High Voltage Switching Diode
BAS20HT1 ONSEMI

类似代替

High Voltage Switching Diode

与BAS21HT1G相关器件

型号 品牌 获取价格 描述 数据表
BAS21H-T1-LF WTE

获取价格

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
BAS21HT3G ONSEMI

获取价格

High Voltage Switching Diode
BAS21HY ROHM

获取价格

BAS21HY是低IR的开关二极管。适合一般开关用途。
BAS21HYFH ROHM

获取价格

BAS21HYFH是低IR的开关二极管。适合一般开关用途。是符合AEC-Q101标准的高可
BAS21J NXP

获取价格

Single high-speed switching diode
BAS21J NEXPERIA

获取价格

Single high-speed switching diodeProduction
BAS21J YANGJIE

获取价格

SOD-323
BAS21J,115 NXP

获取价格

BAS21J - Single high-speed switching diode SOD 2-Pin
BAS21JF ETC

获取价格

DIODE GEN PURP 300V 250MA SC90
BAS21J-Q NEXPERIA

获取价格

High-speed switching diodeProduction