Datasheet > BAS116LS-Q

BAS116LS-Q

更新时间： 2023-09-03 20:31:30

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	214K
描述
Low-leakage diodeProduction

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BAS116LS-Q 数据手册

BAS116LS-Q

Low-leakage diode

3 January 2022

Product data sheet

1. General description

Low-leakage diode in an ultra small DFN1006BD-2 (SOD882BD) leadless Surface-Mounted Device

(SMD) plastic package with side-wettable flanks.

2. Features and benefits

•

Switching time: max. t_rr= 3 µs

•

Low leakage current: max. I_R= 5 nA

Repetitive peak reverse voltage: V_RRM≤ 85 V

Low capacitance typical: C_d= 2 pF

Ultra small and leadless SMD plastic package

Suitable for Automatic Optical Inspection (AOI) of solder joint

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low-leakage current applications

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

325

Unit

I_F

forward current

reverse current

reverse voltage

forward voltage

T_amb= 25 °C

[1]

I_R

V_R= 75 V; pulsed; T_amb= 25 °C

T_amb= 25 °C

V_R

V_F

I_F= 150 mA; t_p≤ 300 µs; δ ≤ 0.02;

pulsed; T_amb= 25 °C

1.25

V_RRM

t_rr

repetitive peak reverse

voltage

reverse recovery time I_F= 10 mA; I_R= 10 mA; I_R(meas)= 1 mA;

R_L= 100 Ω; T_amb= 25 °C

µs

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), 70 µm single-sided copper, tin-plated and standard footprint.

12 3 4 5 6 7...10

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