ATF-26836

更新时间： 2024-11-26 22:47:59

品牌	Logo	应用领域
安捷伦 - AGILENT		/
页数	文件大小	规格书
4页	49K
描述
2-16 GHz General Purpose Gallium Arsenide FET

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中文翻译

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技术参数
数据手册

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ATF-26836 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	FET 技术：	JUNCTION
JESD-609代码：	e0	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	子类别：	Other Transistors
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

ATF-26836 数据手册

2–16 GHz General Purpose

Gallium Arsenide FET

Technical Data

ATF-26836

Features

• High Output Power:

Description

The ATF-26836 is a high perfor-

36 micro-X Package

18.0 dBmTypicalP _1dBat12 GHz mance gallium arsenide Schottky-

barrier-gate field effect transistor

• High Gain:

housed in a cost effective

9.0dBTypicalG_SSat12 GHz

microstrip package. This device is

• Cost Effective Ceramic

designed for use in oscillator

applications and general purpose

Microstrip Package

• Tape-and-Reel Packaging

Option Available^[1]

amplifier applications in the

2-16 GHzfrequencyrange.

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

250 microns.Provengoldbased

metallization systems and nitride

passivation assure a rugged,

reliable device.

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

G_SS

Tuned Small Signal Gain: V_DS= 5 V, I_DS= 30 mA

Optimum Noise Figure: V_DS= 3 V, I_DS= 10 mA

f=12.0GHz dB

7.0

9.0

NF_O

G_A

f=12.0GHz dB

2.2

6.0

Gain @ NF_O: V_DS= 3 V, I = 10 mA

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=5V, I_DS=30mA

f=12.0GHz dBm 15.0

18.0

g_m

I_DSS

V_P

Transconductance: V_DS= 3 V, V_GS= 0 V

Saturated Drain Current: V_DS= 3 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 3 V, I_DS= 1 mA

mmho 15

-3.5

-1.5

-0.5

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

5-67

5965-8704E

12 3 4

中文翻译

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与ATF-26836相关器件

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ATF-26836-STR	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET
ATF-26836-TR1	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET
ATF26884	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET
ATF-26884	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET
ATF-26884-STR	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET
ATF-26884-TR1	AGILENT	获取价格	2-16 GHz General Purpose Gallium Arsenide FET
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ATF-33143	AVAGO	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Low Noise Figure
ATF-33143-BLK	AGILENT	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package