ATF-26884

更新时间： 2024-02-26 04:10:39

品牌	Logo	应用领域
安捷伦 - AGILENT		/
页数	文件大小	规格书
4页	46K
描述
2-16 GHz General Purpose Gallium Arsenide FET

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数据手册

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ATF-26884 数据手册

2–16 GHz General Purpose

Gallium Arsenide FET

Technical Data

ATF-26884

housed in a cost effective

microstrip package. This device is

Features

• High Output Power:

84 Plastic Package

designed for use in oscillator

applications and general purpose

amplifier applications in the

2-16 GHzfrequencyrange.

18.0 dBmTypicalP _1dBat12 GHz

• High Gain:

9.0dBTypicalG_SSat12 GHz

• Low Cost Plastic Package

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

250 microns.Provengoldbased

metallization systems and nitride

passivation assure a rugged,

reliable device.

• Tape-and-Reel Packaging

Option Available^[1]

Description

The ATF-26884 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

G_SS

Tuned Small Signal Gain: V_DS= 5 V, I_DS= 30 mA

Optimum Noise Figure: V_DS= 3 V, I_DS= 10 mA

f=12.0GHz dB

7.0

9.0

NF_O

G_A

f=12.0GHz dB

2.2

6.0

Gain @ NF_O: V_DS= 3 V, I = 10 mA

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=5V, I_DS=30mA

f=12.0GHz dBm 15.0

18.0

g_m

I_DSS

V_P

Transconductance: V_DS= 3 V, V_GS= 0 V

Saturated Drain Current: V_DS= 3 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 3 V, I_DS= 1 mA

mmho 15

-3.5

-1.5

-0.5

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

5-71

5965-8703E

12 3 4

中文翻译

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