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ATF-331M4-TR2 PDF预览

ATF-331M4-TR2

更新时间: 2024-09-30 22:10:03
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页数 文件大小 规格书
16页 161K
描述
Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package

ATF-331M4-TR2 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:CHIP CARRIER, R-CBCC-N4针数:4
Reach Compliance Code:unknown风险等级:5.27
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:5.5 VFET 技术:HIGH ELECTRON MOBILITY
最高频带:X BANDJESD-30 代码:R-CBCC-N4
JESD-609代码:e0元件数量:1
端子数量:4工作模式:DEPLETION MODE
最高工作温度:160 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:0.4 W最小功率增益 (Gp):13.5 dB
认证状态:Not Qualified子类别:FET RF Small Signal
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

ATF-331M4-TR2 数据手册

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Agilent ATF-331M4 Low Noise  
Pseudomorphic HEMT in a  
Miniature Leadless Package  
Data Sheet  
Features  
• Low noise figure  
• Excellent uniformity in product  
specifications  
• 1600 micron gate width  
• Miniature leadless package  
1.4 mm x 1.2 mm x 0.7 mm  
MiniPak 1.4 mm x 1.2 mm Package  
Description  
• Tape-and-reel packaging option  
available  
Agilent Technologies’s  
ATF-331M4 is a high linearity,  
low noise pHEMT housed in a  
miniature leadless package.  
Specifications  
2 GHz; 4 V, 60 mA (Typ.)  
The ATF-331M4’s small size and  
low profile makes it ideal for the  
design of hybrid modules and  
other space-constraint devices.  
• 0.6 dB noise figure  
• 15 dB associated gain  
Pin Connections and  
Package Marking  
• 19 dBm output power at 1 dB gain  
compression  
Based on its featured perfor-  
mance, ATF-331M4 is ideal for  
the first or second stage of base  
station LNA due to the excellent  
combination of low noise figure  
and enhanced linearity[1]. The  
device is also suitable for appli-  
cations in Wireless LAN,  
WLL/RLL, MMDS, and other  
systems requiring super low  
noise figure with good intercept  
in the 450 MHz to 10 GHz  
• 31 dBm output 3rd order intercept  
Drain  
Pin 4  
Source  
Pin 3  
Px  
Applications  
Gate  
Pin 2  
Source  
Pin 1  
• Tower mounted amplifier, low noise  
amplifier and driver amplifier for  
GSM/TDMA/CDMA base stations  
Note:  
Top View. Package marking provides orientation,  
product identification and date code.  
• LNA for WLAN, WLL/RLL, MMDS  
and wireless data infrastructures  
P= Device Type Code  
General purpose discrete PHEMT for  
other ultra low noise applications  
x= Date code character. A different  
character is assigned for each month  
and year.  
frequency range.  
Note:  
1. From the same PHEMT FET family, the  
smaller geometry ATF-34143 may also be  
considered for the higher gain performance,  
particularly in the higher frequency band  
(1.8 GHz and up).  

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