Datasheet > ATF-331M4-TR2G

ATF-331M4-TR2G

更新时间： 2024-02-10 22:02:56

品牌	Logo	应用领域
安捷伦 - AGILENT		放大器晶体管
页数	文件大小	规格书
16页	212K
描述
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, MINIPAK-4

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技术参数
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ATF-331M4-TR2G 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	CHIP CARRIER, R-CBCC-N4	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.27
配置：	SINGLE	最小漏源击穿电压：	5.5 V
FET 技术：	HIGH ELECTRON MOBILITY	最高频带：	X BAND
JESD-30 代码：	R-CBCC-N4	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	4	工作模式：	DEPLETION MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	13.5 dB
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN	端子形式：	NO LEAD
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

ATF-331M4-TR2G 数据手册

Agilent ATF-331M4 Low Noise

Pseudomorphic HEMT in a

Miniature Leadless Package

Data Sheet

Features

• Low noise figure

• Excellent uniformity in product

specifications

• 1600 micron gate width

• Miniature leadless package

1.4 mm x 1.2 mm x 0.7 mm

MiniPak 1.4 mm x 1.2 mm Package

Description

• Tape-and-reel packaging option

available

Agilent Technologies’s

ATF-331M4 is a high linearity,

low noise pHEMT housed in a

miniature leadless package.

Specifications

2 GHz; 4 V, 60 mA (Typ.)

The ATF-331M4’s small size and

low profile makes it ideal for the

design of hybrid modules and

other space-constraint devices.

• 0.6 dB noise figure

• 15 dB associated gain

Pin Connections and

Package Marking

• 19 dBm output power at 1 dB gain

compression

Based on its featured perfor-

mance, ATF-331M4 is ideal for

the first or second stage of base

station LNA due to the excellent

combination of low noise figure

and enhanced linearity^[1]. The

device is also suitable for appli-

cations in Wireless LAN,

WLL/RLL, MMDS, and other

systems requiring super low

noise figure with good intercept

in the 450 MHz to 10 GHz

• 31 dBm output 3^rdorder intercept

Drain

Pin 4

Source

Pin 3

Applications

Gate

Pin 2

Source

Pin 1

• Tower mounted amplifier, low noise

amplifier and driver amplifier for

GSM/TDMA/CDMA base stations

Note:

Top View. Package marking provides orientation,

product identification and date code.

• LNA for WLAN, WLL/RLL, MMDS

and wireless data infrastructures

“P” = Device Type Code

•

General purpose discrete PHEMT for

other ultra low noise applications

“x” = Date code character. A different

character is assigned for each month

and year.

frequency range.

Note:

1. From the same PHEMT FET family, the

smaller geometry ATF-34143 may also be

considered for the higher gain performance,

particularly in the higher frequency band

(1.8 GHz and up).

12 3 4 5 6 7...16

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与ATF-331M4-TR2G相关器件

型号	品牌	获取价格	描述	数据表
ATF34143	HP	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF34143	AGILENT	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143	AGILENT	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143	HP	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143	AVAGO	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Low Noise Figure
ATF34143BLK	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 5.5V V(BR)DSS \| 90MA I(DSS) \| SOT-343R
ATF-34143-BLK	HP	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143-BLK	AGILENT	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143-BLKG	AVAGO	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF34143TR1	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 5.5V V(BR)DSS \| 90MA I(DSS) \| SOT-343R

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