Datasheet > ATF-331M4

ATF-331M4

更新时间： 2024-11-28 23:33:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
16页	162K
描述
PHEMT Low Noise +31 dBm OIP3 in MiniPak

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ATF-331M4 数据手册

Agilent ATF-331M4 Low Noise

Pseudomorphic HEMT in a

Miniature Leadless Package

Data Sheet

Features

• Low noise figure

• Excellent uniformity in product

specifications

• 1600 micron gate width

• Miniature leadless package

1.4 mm x 1.2 mm x 0.7 mm

MiniPak 1.4 mm x 1.2 mm Package

Description

• Tape-and-reel packaging option

available

Agilent Technologies’s

ATF-331M4 is a high linearity,

low noise pHEMT housed in a

miniature leadless package.

Specifications

2 GHz; 4 V, 60 mA (Typ.)

The ATF-331M4’s small size and

low profile makes it ideal for the

design of hybrid modules and

other space-constraint devices.

• 0.6 dB noise figure

• 15 dB associated gain

Pin Connections and

Package Marking

• 19 dBm output power at 1 dB gain

compression

Based on its featured perfor-

mance, ATF-331M4 is ideal for

the first or second stage of base

station LNA due to the excellent

combination of low noise figure

and enhanced linearity^[1]. The

device is also suitable for appli-

cations in Wireless LAN,

WLL/RLL, MMDS, and other

systems requiring super low

noise figure with good intercept

in the 450 MHz to 10 GHz

• 31 dBm output 3^rdorder intercept

Drain

Pin 4

Source

Pin 3

Applications

Gate

Pin 2

Source

Pin 1

• Tower mounted amplifier, low noise

amplifier and driver amplifier for

GSM/TDMA/CDMA base stations

Note:

Top View. Package marking provides orientation,

product identification and date code.

• LNA for WLAN, WLL/RLL, MMDS

and wireless data infrastructures

“P” = Device Type Code

•

General purpose discrete PHEMT for

other ultra low noise applications

“x” = Date code character. A different

character is assigned for each month

and year.

frequency range.

Note:

1. From the same PHEMT FET family, the

smaller geometry ATF-34143 may also be

considered for the higher gain performance,

particularly in the higher frequency band

(1.8 GHz and up).

12 3 4 5 6 7...16

中文翻译

下载PDF

与ATF-331M4相关器件

型号	品牌	获取价格	描述	数据表
ATF-331M4-BLK	AGILENT	获取价格	Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4-BLKG	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF-331M4-TR1	AGILENT	获取价格	Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4-TR1G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF-331M4-TR2	AGILENT	获取价格	Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4-TR2G	AGILENT	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF34143	HP	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF34143	AGILENT	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143	AGILENT	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-34143	HP	获取价格	Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

与ATF-331M4相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

ATF-331M4

ATF-331M4 数据手册

与ATF-331M4相关器件

与ATF-331M4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ATF-331M4

ATF-331M4 数据手册

与ATF-331M4相关器件

与ATF-331M4相关文章

您还可以找

您在本页遇到什么问题？