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ATF-33143-BLKG PDF预览

ATF-33143-BLKG

更新时间： 2024-10-01 19:59:15
品牌 Logo 应用领域
安捷伦 - AGILENT 放大器光电二极管晶体管
页数 文件大小 规格书
18页 159K
描述
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN

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ATF-33143-BLKG 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G4
针数：4Reach Compliance Code：unknown
风险等级：5.11Is Samacsys：N
其他特性：LOW NOISE外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：5.5 V
FET 技术：HIGH ELECTRON MOBILITY最高频带：X BAND
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4工作模式：DEPLETION MODE
最高工作温度：160 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：0.6 W最小功率增益 (Gp)：13.5 dB
认证状态：Not Qualified子类别：FET RF Small Signal
表面贴装：YES端子面层：TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

ATF-33143-BLKG 数据手册

 浏览型号ATF-33143-BLKG的Datasheet PDF文件第2页浏览型号ATF-33143-BLKG的Datasheet PDF文件第3页浏览型号ATF-33143-BLKG的Datasheet PDF文件第4页浏览型号ATF-33143-BLKG的Datasheet PDF文件第5页浏览型号ATF-33143-BLKG的Datasheet PDF文件第6页浏览型号ATF-33143-BLKG的Datasheet PDF文件第7页 
ATF-33143 Low Noise  
Pseudomorphic HEMT in a Surface  
Mount Plastic Package  
Data Sheet  
Features  
• Lead-free Option Available  
• Low Noise Figure  
Description  
Surface Mount Package  
SOT-343  
• Excellent Uniformity in  
Product Specifications  
Agilent’s ATF-33143 is a high  
dynamic range, low noise PHEMT  
housed in a 4-lead SC-70 (SOT-343)  
surface mount plastic package.  
• 1600 micron Gate Width  
• Low Cost Surface Mount  
Small Plastic Package  
SOT-343 (4 lead SC-70)  
Based on its featured performance,  
ATF-33143 is ideal for the first or  
second stage of base station LNA  
due to the excellent combination  
of low noise figure and enhanced  
linearity[1]. The device is also  
suitable for applications in Wire-  
less LAN, WLL/RLL, MMDS, and  
other systems requiring super low  
noise figure with good intercept in  
the 450 MHz to 10 GHz frequency  
range.  
• Tape-and-Reel Packaging  
Option Available  
Pin Connections and  
Package Marking  
Specifications  
1.9 GHz; 4V, 80 mA (Typ.)  
DRAIN  
SOURCE  
• 0.5 dB Noise Figure  
• 15 dB Associated Gain  
SOURCE  
GATE  
• 22 dBm Output Power at  
1 dB Gain Compression  
• 33.5 dBm Output 3rd Order  
Intercept  
Note: Top View. Package marking  
provides orientation and identification.  
Note:  
“3P” = Device code  
“x” = Date code character. A new  
character is assigned for each month, year.  
1. From the same PHEMT FET family, the  
smaller geometry ATF-34143 may also  
be considered for the higher gain  
performance, particularly in the higher  
frequency band (1.8 GHz and up).  
Applications  
• Tower Mounted Amplifier,  
Low Noise Amplifier and  
Driver Amplifier for GSM/  
TDMA/CDMA Base Stations  
Attention:  
•
LNA for Wireless LAN, WLL/  
RLL and MMDS Applications  
Observe precautions for  
handling electrostatic  
sensitive devices.  
• General Purpose Discrete  
PHEMT for other Ultra Low  
Noise Applications  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 1)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
1234567...18

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