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ATF-33143-TR1G PDF预览

ATF-33143-TR1G

更新时间： 2024-10-01 12:52:03
品牌 Logo 应用领域
安华高科 - AVAGO 晶体小信号场效应晶体管射频小信号场效应晶体管
页数 文件大小 规格书
17页 407K
描述
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

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中文翻译

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ATF-33143-TR1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：6.86
Is Samacsys：N其他特性：LOW NOISE
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：5.5 VFET 技术：HIGH ELECTRON MOBILITY
最高频带：X BANDJESD-30 代码：R-PDSO-G4
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：4
工作模式：DEPLETION MODE最高工作温度：160 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL功耗环境最大值：0.6 W
最小功率增益 (Gp)：13.5 dB认证状态：Not Qualified
子类别：FET RF Small Signals表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

ATF-33143-TR1G 数据手册

 浏览型号ATF-33143-TR1G的Datasheet PDF文件第2页浏览型号ATF-33143-TR1G的Datasheet PDF文件第3页浏览型号ATF-33143-TR1G的Datasheet PDF文件第4页浏览型号ATF-33143-TR1G的Datasheet PDF文件第5页浏览型号ATF-33143-TR1G的Datasheet PDF文件第6页浏览型号ATF-33143-TR1G的Datasheet PDF文件第7页 
ATF-33143  
Low Noise Pseudomorphic HEMT  
in a Surface Mount Plastic Package  
Data Sheet  
Description  
Features  
Avago’s ATF-33143 is a high dynamic range, low noise  
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount  
plastic package.  
Lead-free Option Available  
Low Noise Figure  
Excellent Uniformity in Product Specifications  
1600 micron Gate Width  
Based on its featured performance, ATF-33143 is ideal for  
the first or second stage of base station LNA due to the  
excellent combination of low noise figure and enhanced  
linearity[1]. The device is also suitable for applications in  
Wireless LAN, WLL/RLL, MMDS, and other systems requiring  
super low noise figure with good intercept in the 450 MHz  
to 10 GHz frequency range.  
Low Cost Surface Mount Small Plastic Package  
SOT-343 (4 lead SC-70)  
Tape-and-Reel Packaging Option Available  
Specifications  
1.9 GHz; 4V, 80 mA (Typ.)  
Note:  
1. From the same PHEMT FET family, the smaller geometry ATF-  
34143 may also be considered for the higher gain performance,  
particularly in the higher frequency band (1.8 GHz and up).  
0.5 dB Noise Figure  
15 dB Associated Gain  
22 dBm Output Power at 1 dB Gain Compression  
33.5 dBm Output 3rd Order Intercept  
Surface Mount Package SOT-343  
Applications  
Tower Mounted Amplifier, Low Noise Amplifier and  
Driver Amplifier for GSM/TDMA/CDMA Base Stations  
LNA for Wireless LAN, WLL/RLL and MMDS  
Applications  
Pin Connections and Package Marking  
General Purpose Discrete PHEMT for other Ultra Low  
DRAIN  
SOURCE  
Noise Applications  
SOURCE  
GATE  
Attention: Observe precautions for  
handling electrostatic sensitive devices.  
ESD Machine Model (Class A)  
ESD Human Body Model (Class 0)  
Refer to Avago Application Note A004R:  
Electrostatic Discharge Damage and Control.  
Note:  
Top View. Package marking provides  
orientation and identification.  
“3P”= Device code  
“x” = Datecodecharacter. Anewcharacter  
is assigned for each month, year.  
1234567...17

中文翻译

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ATF-33143-TR1G 替代型号

型号 品牌 替代类型 描述 数据表
ATF-33143-TR2G AVAGO

类似代替

 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE, PLASTIC, SC-70, 4 PIN
ATF-33143-BLKG AVAGO

类似代替

 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

与ATF-33143-TR1G相关器件

型号 品牌 获取价格 描述 数据表
ATF-33143-TR2 AGILENT

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 		Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-33143-TR2G AVAGO

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 		X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE, PLASTIC, SC-70, 4 PIN
ATF-33143-TR2G AGILENT

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF331M4 AGILENT

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 		Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4 ETC

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 		PHEMT Low Noise +31 dBm OIP3 in MiniPak
ATF-331M4-BLK AGILENT

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 		Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4-BLKG AGILENT

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF-331M4-TR1 AGILENT

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 		Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
ATF-331M4-TR1G AGILENT

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 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Elect
ATF-331M4-TR2 AGILENT

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 		Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package

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