ATF-25570

更新时间： 2024-11-26 22:47:59

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管
页数	文件大小	规格书
3页	46K
描述
0.5-10 GHz General Purpose Gallium Arsenide FET

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中文翻译

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技术参数
数据手册

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ATF-25570 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	Is Samacsys：	N
FET 技术：	JUNCTION	JESD-609代码：	e0
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
子类别：	Other Transistors	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

ATF-25570 数据手册

0.5–10 GHz General Purpose

Gallium Arsenide FET

Technical Data

ATF-25570

ity package. This device is

designed for use in general

purpose amplifier and oscillator

applications in the 0.5-10 GHz

frequency range.

Features

70 mil Package

• High Output Power:

20.5 dBm Typical P_{1 dB}at 4 GHz

• Low Noise Figure:

1.0 dB Typical at 4 GHz

• High Associated Gain:

This GaAs FET device has a

nominal 0.3 micron gate length

using airbridge interconnects

between drain fingers. Total gate

periphery is 500 microns. Proven

gold based metallization systems

and nitride passivation assure a

rugged, reliable device.

14.0 dBTypicalat4 GHz

• Hermetic Gold-Ceramic

Microstrip Package

Description

The ATF-25570 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

housed in a hermetic, high reliabil-

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

NF_O

Optimum Noise Figure: V_DS= 3 V, I_DS= 20 mA

f=4.0GHz

f=6.0GHz

f=8.0GHz

1.0

1.2

1.4

1.3

G_A

Gain @ NF_O: V_DS= 3 V, I_DS= 20 mA

f=4.0GHz

f=6.0GHz

f=8.0GHz

13.0

14.0

11.0

8.5

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=5V,I_DS=50mA

f=4.0GHz dBm

20.5

G_{1 dB}

g_m

1 dB Compressed Gain: V_DS=5 V, I_DS=50 mA

Transconductance: V_DS=3 V, V_GS= 0 V

Saturated Drain Current: V_DS= 3 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 3 V, I_DS= 1 mA

f=4.0GHz

mmho 50

13.0

I_DSS

V_P

100

-2.0

150

-0.8

-3.0

5965-8711E

5-60

12 3

中文翻译

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