Datasheet > AT49BV322DT

AT49BV322DT

更新时间： 2024-09-13 05:07:15

品牌	Logo	应用领域
爱特美尔 - ATMEL		/
页数	文件大小	规格书
33页	494K
描述
32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory

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AT49BV322DT 数据手册

Features

• Single Voltage Read/Write Operation: 2.65V to 3.6V

• Access Time – 70 ns

• Sector Erase Architecture

– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

• Fast Word Program Time – 10 µs

• Fast Sector Erase Time – 100 ms

• Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase

of a Different Sector

– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending

Programming of Any Other Byte/Word

• Low-power Operation

32-megabit

(2M x 16/4M x 8)

3-volt Only

– 10 mA Active

Flash Memory

– 15 µA Standby

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• VPP Pin for Write Protection and Accelerated Program Operation

• RESET Input for Device Initialization

• Sector Lockdown Support

• TSOP and CBGA Package Options

• Top or Bottom Boot Block Configuration Available

• 128-bit Protection Register

AT49BV322D

AT49BV322DT

• Minimum 100,000 Erase Cycles

• Common Flash Interface (CFI)

1. Description

The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152

words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on

I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-

tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball

CBGA package. The device has CE and OE control signals to avoid any bus conten-

tion. This device can be read or reprogrammed using a single power supply, making it

ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the

device in other operation modes such as program and erase. The device has the

capability to protect the data in any sector (see “Sector Lockdown” on page 7).

To increase the flexibility of the device, it contains an Erase Suspend and Program

Suspend feature. This feature will put the erase or program on hold for any amount of

time and let the user read data from or program data to any of the remaining sectors

within the memory. The end of a program or an erase cycle is detected by the

READY/BUSY pin, Data Polling or by the toggle bit.

3582B–FLASH–11/05

12 3 4 5 6 7...33

中文翻译

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与AT49BV322DT相关器件

型号	品牌	获取价格	描述	数据表
AT49BV322DT-70CU	ATMEL	获取价格	32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory
AT49BV322DT-70TU	ATMEL	获取价格	32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory
AT49BV4096	ATMEL	获取价格	4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-15RC	ATMEL	获取价格	4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-15RI	ATMEL	获取价格	4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-15RJ	ATMEL	获取价格	Flash, 256KX16, 150ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44
AT49BV4096-15RL	ATMEL	获取价格	Flash, 256KX16, 150ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44
AT49BV4096-15TC	ATMEL	获取价格	4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-15TI	ATMEL	获取价格	4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
AT49BV4096-15TJ	ATMEL	获取价格	Flash, 256KX16, 150ns, PDSO48, PLASTIC, MO-142DD, TSOP1-48

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