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AT49BV4096-20TC PDF预览

AT49BV4096-20TC

更新时间: 2024-10-31 23:00:35
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
11页 179K
描述
4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

AT49BV4096-20TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91最长访问时间:200 ns
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1部门数/规模:3,1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3/3.3 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:8K,232K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

AT49BV4096-20TC 数据手册

 浏览型号AT49BV4096-20TC的Datasheet PDF文件第2页浏览型号AT49BV4096-20TC的Datasheet PDF文件第3页浏览型号AT49BV4096-20TC的Datasheet PDF文件第4页浏览型号AT49BV4096-20TC的Datasheet PDF文件第5页浏览型号AT49BV4096-20TC的Datasheet PDF文件第6页浏览型号AT49BV4096-20TC的Datasheet PDF文件第7页 
Features  
Low Voltage Operation  
- 2.7V Read  
- 5V Program/Erase  
Fast Read Access Time - 120 ns  
Internal Erase/Program Control  
Sector Architecture  
- One 8K Words (16K bytes) Boot Block with Programming Lockout  
- Two 8K Words (16K bytes) Parameter Blocks  
- One 232K Words (464K bytes) Main Memory Array Block  
Fast Sector Erase Time - 10 seconds  
Word-By-Word Programming - 10 µs/Word  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
- 25 mA Active Current  
- 50 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
4-Megabit  
(256K x 16)  
3-volt Only  
CMOS Flash  
Memory  
Description  
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized  
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile  
CMOS technology, the devices offer access times to 120 ns with power dissipation of  
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than  
50 µA.  
AT49BV4096  
AT49LV4096  
Preliminary  
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not  
require high input voltages for programming. Reading data out of the device is similar  
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus  
Pin Configurations  
(continued)  
Pin Name  
A0 - A17  
CE  
Function  
AT49BV4096/LV4096  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Reset  
OE  
WE  
RESET  
SOIC (SOP)  
Program/Erase  
Power Supply  
VPP  
VPP  
NC  
A17  
A7  
A6  
A5  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
RESET  
WE  
2
3
Data  
Inputs/Outputs  
I/O0 - I/O15  
NC  
A8  
A9  
4
5
6
7
8
9
A10  
A11  
A12  
A13  
A14  
A15  
A16  
NC  
GND  
I/O15  
I/O7  
I/O14  
I/O6  
I/O13  
I/O5  
I/O12  
I/O4  
VCC  
No Connect  
A4  
A3  
TSOP Top View  
A2  
A1  
A0  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Type 1  
A16  
CE  
GND  
A15  
A14  
A13  
1
3
5
7
9
48  
46  
44  
42  
40  
NC  
2
47  
45  
43  
GND  
I/O15  
A12  
A10  
A8  
4
6
OE  
I/O0  
I/O8  
I/O1  
I/O9  
I/O2  
I/O10  
I/O3  
I/O11  
A11  
A9  
I/O7  
I/O6  
I/O5  
I/O14  
I/O13  
I/O12  
VCC  
8
41  
39  
37  
35  
NC  
NC  
10  
WE  
11  
13  
38  
36  
I/O4  
RESET  
12  
14  
I/O11  
I/O10  
I/O9  
VPP  
NC  
I/O3  
I/O2  
NC  
15  
17  
34  
32  
NC  
A7  
16  
18  
33  
31  
A17  
I/O1  
I/O0  
A6  
A4  
19  
21  
23  
30  
28  
26  
I/O8  
OE  
CE  
29  
27  
25  
A5  
A3  
A1  
20  
22  
24  
GND  
A0  
0874A–5/97  
A2  

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