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AT49BV4096A-12TJ PDF预览

AT49BV4096A-12TJ

更新时间: 2024-11-02 03:24:51
品牌 Logo 应用领域
爱特美尔 - ATMEL ATM异步传输模式光电二极管内存集成电路
页数 文件大小 规格书
18页 203K
描述
Flash, 256KX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48

AT49BV4096A-12TJ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:12 X 20 MM, PLASTIC, TSOP1-48
针数:48Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.83最长访问时间:120 ns
其他特性:BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; BOTTOM BOOT BLOCK; CONFIGURABLE AS 256K X 16备用内存宽度:8
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
JESD-609代码:e3长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:12 mm

AT49BV4096A-12TJ 数据手册

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Features  
Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)  
Fast Read Access Time – 70 ns  
Internal Erase/Program Control  
Sector Architecture  
– One 8K Word (16K Bytes) Boot Block with Programming Lockout  
– Two 4K Word (8K Bytes) Parameter Blocks  
– One 240K Word (480K Bytes) Main Memory Array Block  
Fast Sector Erase Time – 10 Seconds  
Byte-by-byte or Word-by-word Programming – 30 µs Typical  
Hardware Data Protection  
Data Polling for End of Program Detection  
Low Power Dissipation  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
4-megabit  
(512K x 8/  
256K x 16)  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
Description  
The AT49BV/LV4096A is a 3-volt, 4-megabit Flash memory organized as 524,288  
words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s  
advanced nonvolatile CMOS technology, the device offers access times to 70 ns with  
power dissipation of just 67 mV at 2.7V read. When deselected, the CMOS standby  
current is less than 50 µA.  
The device contains a user-enabled “boot block” protection feature. The  
AT49BV/LV4096A locates the boot block at lowest order addresses (“bottom boot”).  
AT49BV4096A  
AT49LV4096A  
To allow for simple in-system reprogrammability, the AT49BV/LV4096A does not  
require high input voltages for programming. Reading data out of the device is similar  
to reading from an EPROM; it has standard CE, OE and WE inputs to avoid bus con-  
tention. Reprogramming the AT49BV/LV4096A is performed by first erasing a block of  
data and then programming on a byte-by-byte or word-by-word basis.  
Pin Configurations  
Pin Name  
A0 - A17  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Reset  
OE  
WE  
RESET  
VPP  
VPP can be left unconnected or connected to VCC, GND, 5V or  
12V. The input has no effect on the operation of the device.  
I/O0 - I/O15  
I/O15(A-1)  
Data Inputs/Outputs  
I/O15 (Data Input/Output, Word Mode)  
A-1 (LSB Address Input, Byte Mode)  
BYTE  
NC  
Selects Byte or Word Mode  
No Connect  
Rev. 1618E–FLASH–07/02  

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