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AT49BV512-12PC PDF预览

AT49BV512-12PC

更新时间: 2024-11-23 22:27:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池存储内存集成电路光电二极管异步传输模式ATM
页数 文件大小 规格书
11页 122K
描述
512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory

AT49BV512-12PC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP32,.6
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91Is Samacsys:N
最长访问时间:120 ns其他特性:HARDWARE DATA PROTECTION
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDIP-T32
JESD-609代码:e0长度:42.05 mm
内存密度:524288 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:1,1端子数量:32
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP32,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:5.59 mm
部门规模:8K,56K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:15.24 mmBase Number Matches:1

AT49BV512-12PC 数据手册

 浏览型号AT49BV512-12PC的Datasheet PDF文件第2页浏览型号AT49BV512-12PC的Datasheet PDF文件第3页浏览型号AT49BV512-12PC的Datasheet PDF文件第4页浏览型号AT49BV512-12PC的Datasheet PDF文件第5页浏览型号AT49BV512-12PC的Datasheet PDF文件第6页浏览型号AT49BV512-12PC的Datasheet PDF文件第7页 
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Fast Read Access Time - 120 ns  
Internal Program Control and Timer  
8K bytes Boot Block With Lockout  
Fast Erase Cycle Time - 10 seconds  
Byte By Byte Programming - 30 µs/Byte typical  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
512K (64K x 8)  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
Description  
The AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of  
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the  
devices offer access times to 120 ns with power dissipation of just 90 mW over the  
commercial temperature range. When the devices are deselected, the CMOS standby  
current is less than 50 µA.  
AT49BV512  
To allow for simple in-system reprogrammability, the AT49BV512 does not require  
high input voltages for programming. Three-volt-only commands determine the read  
and programming operation of the device. Reading data out of the device is similar to  
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing  
the entire 1 megabit of memory and then programming on a byte by byte basis. The  
(continued)  
Pin Configurations  
DIP Top View  
Pin Name  
A0 - A15  
CE  
Function  
NC  
NC  
A15  
A12  
A7  
1
2
3
4
5
6
7
8
9
32 VCC  
31 WE  
30 NC  
29 A14  
28 A13  
27 A8  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
A6  
OE  
A5  
26 A9  
A4  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
A3  
WE  
A2 10  
A1 11  
I/O0 - I/O7  
NC  
A0 12  
I/O0 13  
I/O1 14  
I/O2 15  
GND 16  
VSOP Top View (8 x 14 mm) or  
TSOP Top View (8 x 20 mm)  
Type 1  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
PLCC Top View  
2
A10  
CE  
A8  
3
A13  
A14  
NC  
WE  
VCC  
NC  
NC  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
5
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
6
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
7
8
9
10  
11  
12  
13  
14  
15  
16  
A2 10  
A1 11  
A0 12  
I/O0 13  
A6  
A1  
A5  
A2  
Rev. 1026C–09/98  
A4  
A3  

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