Datasheet > AT49BV4096A-90TC

AT49BV4096A-90TC

更新时间： 2024-09-14 23:32:47

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
18页	202K
描述
EEPROM\|FLASH\|256KX16/512KX8\|CMOS\|TSSOP\|48PIN\|PLASTIC

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中文翻译

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数据手册

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AT49BV4096A-90TC 数据手册

Features

• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)

• Fast Read Access Time – 70 ns

• Internal Erase/Program Control

• Sector Architecture

– One 8K Word (16K Bytes) Boot Block with Programming Lockout

– Two 4K Word (8K Bytes) Parameter Blocks

– One 240K Word (480K Bytes) Main Memory Array Block

• Fast Sector Erase Time – 10 Seconds

• Byte-by-byte or Word-by-word Programming – 30 µs Typical

• Hardware Data Protection

• Data Polling for End of Program Detection

• Low Power Dissipation

– 25 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

4-megabit

(512K x 8/

256K x 16)

Single 2.7-volt

Battery-Voltage^™

Flash Memory

Description

The AT49BV/LV4096A is a 3-volt, 4-megabit Flash memory organized as 524,288

words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s

advanced nonvolatile CMOS technology, the device offers access times to 70 ns with

power dissipation of just 67 mV at 2.7V read. When deselected, the CMOS standby

current is less than 50 µA.

The device contains a user-enabled “boot block” protection feature. The

AT49BV/LV4096A locates the boot block at lowest order addresses (“bottom boot”).

AT49BV4096A

AT49LV4096A

To allow for simple in-system reprogrammability, the AT49BV/LV4096A does not

require high input voltages for programming. Reading data out of the device is similar

to reading from an EPROM; it has standard CE, OE and WE inputs to avoid bus con-

tention. Reprogramming the AT49BV/LV4096A is performed by first erasing a block of

data and then programming on a byte-by-byte or word-by-word basis.

Pin Configurations

Pin Name

A0 - A17

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

RESET

VPP

VPP can be left unconnected or connected to VCC, GND, 5V or

12V. The input has no effect on the operation of the device.

I/O0 - I/O15

I/O15(A-1)

Data Inputs/Outputs

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

BYTE

Selects Byte or Word Mode

No Connect

Rev. 1618E–FLASH–07/02

12 3 4 5 6 7...18

中文翻译

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与AT49BV4096A-90TC相关器件

型号	品牌	获取价格	描述	数据表
AT49BV4096A-90TI	ATMEL	获取价格	Flash, 256KX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV4096A-90TJ	ATMEL	获取价格	Flash, 256KX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV4096A-90TL	ATMEL	获取价格	Flash, 256KX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142DD, TSOP1-48
AT49BV4096AT	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096AT-12RC	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096AT-12RI	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096AT-12TC	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096AT-12TI	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV512	ATMEL	获取价格	512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV512-12JC	ATMEL	获取价格	512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory

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