Datasheet > AT49BV4096A

AT49BV4096A

更新时间： 2024-11-28 23:00:35

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
15页	244K
描述
4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT49BV4096A 数据手册

Features

• 2.7V to 3.6V Read/Write Operation

• Fast Read Access Time - 120 ns

• Internal Erase/Program Control

• Sector Architecture

– One 8K Words (16K bytes) Boot Block with Programming Lockout

– Two 4K Words (8K bytes) Parameter Blocks

– One 240K Words (480K bytes) Main Memory Array Block

• Fast Sector Erase Time - 10 seconds

• Byte-by-Byte or Word-By-Word Programming - 30 µs Typical

• Hardware Data Protection

• DATA Polling For End Of Program Detection

• Low-Power Dissipation

– 25 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

4-Megabit

(512K x 8/

256K x 16)

CMOS Flash

Memory

Description

The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories

organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access

times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected,

the CMOS standby current is less than 50 µA.

AT49BV004

The device contains a user-enabled “boot block” protection feature. Two versions of

the feature are available: the AT49BV004/4096A locates the boot block at lowest

order addresses (“bottom boot”); the AT49BV004T/4096AT locates it at highest order

addresses (“top boot”).

AT49BV004T

AT49BV4096A

AT49BV4096AT

Preliminary

To allow for simple in-system reprogrammability, the AT49BV004(T)/4096A(T) does

not require high input voltages for programming. Reading data out of the device is

similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid

bus contention. Reprogramming the AT49BV004(T)/4096A(T) is performed by first

erasing a block of data and then programming on a byte-by-byte or word-by-word

basis.

(continued)

Pin Configurations

Pin Name

A0 - A18

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

RESET

RDY/BUSY

Ready/Busy Output

Optional Power Supply for Faster

Program/Erase Operations

VPP

I/O0 - I/O14 Data Inputs/Outputs

I/O15 (Data Input/Output, Word Mode)

I/O15(A-1)

A-1 (LSB Address Input, Byte Mode)

Selects Byte or Word Mode

No Connect

BYTE

Rev. 1139A–09/98

12 3 4 5 6 7...15

中文翻译

下载PDF

与AT49BV4096A相关器件

型号	品牌	获取价格	描述	数据表
AT49BV4096A-11C1I	ATMEL	获取价格	Flash, 256KX16, 110ns, PBGA48, 7 X 7 MM, 1.20 MM HEIGHT, 0.75 MM PITCH, CSBGA-48
AT49BV4096A-11CI	ETC	获取价格	x8/x16 Flash EEPROM
AT49BV4096A-12RC	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096A-12RI	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096A-12TC	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096A-12TI	ATMEL	获取价格	4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV4096A-12TJ	ATMEL	获取价格	Flash, 256KX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
AT49BV4096A-12TL	ATMEL	获取价格	Flash, 256KX16, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
AT49BV4096A-15RC	ATMEL	获取价格	Flash, 256KX16, 150ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44
AT49BV4096A-15RI	ATMEL	获取价格	Flash, 256KX16, 150ns, PDSO44, 0.525 INCH, PLASTIC, SOIC-44

与AT49BV4096A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV4096A

AT49BV4096A 数据手册

与AT49BV4096A相关器件

与AT49BV4096A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49BV4096A

AT49BV4096A 数据手册

与AT49BV4096A相关器件

与AT49BV4096A相关文章

您还可以找

您在本页遇到什么问题？