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AT49BV4096A-12RC PDF预览

AT49BV4096A-12RC

更新时间: 2024-11-23 23:00:35
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
15页 244K
描述
4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory

AT49BV4096A-12RC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.525 INCH, PLASTIC, SOIC-44
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.91最长访问时间:120 ns
其他特性:BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; BOTTOM BOOT BLOCK; CONFIGURABLE AS 256K X 16备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:28.195 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP44,.63封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:2.77 mm部门规模:16K,8K,480K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:13.34 mmBase Number Matches:1

AT49BV4096A-12RC 数据手册

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Features  
2.7V to 3.6V Read/Write Operation  
Fast Read Access Time - 120 ns  
Internal Erase/Program Control  
Sector Architecture  
– One 8K Words (16K bytes) Boot Block with Programming Lockout  
– Two 4K Words (8K bytes) Parameter Blocks  
– One 240K Words (480K bytes) Main Memory Array Block  
Fast Sector Erase Time - 10 seconds  
Byte-by-Byte or Word-By-Word Programming - 30 µs Typical  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low-Power Dissipation  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
4-Megabit  
(512K x 8/  
256K x 16)  
CMOS Flash  
Memory  
Description  
The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories  
organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac-  
tured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access  
times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected,  
the CMOS standby current is less than 50 µA.  
AT49BV004  
The device contains a user-enabled “boot block” protection feature. Two versions of  
the feature are available: the AT49BV004/4096A locates the boot block at lowest  
order addresses (“bottom boot”); the AT49BV004T/4096AT locates it at highest order  
addresses (“top boot”).  
AT49BV004T  
AT49BV4096A  
AT49BV4096AT  
Preliminary  
To allow for simple in-system reprogrammability, the AT49BV004(T)/4096A(T) does  
not require high input voltages for programming. Reading data out of the device is  
similar to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid  
bus contention. Reprogramming the AT49BV004(T)/4096A(T) is performed by first  
erasing a block of data and then programming on a byte-by-byte or word-by-word  
basis.  
(continued)  
Pin Configurations  
Pin Name  
A0 - A18  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Reset  
OE  
WE  
RESET  
RDY/BUSY  
Ready/Busy Output  
Optional Power Supply for Faster  
Program/Erase Operations  
VPP  
I/O0 - I/O14 Data Inputs/Outputs  
I/O15 (Data Input/Output, Word Mode)  
I/O15(A-1)  
A-1 (LSB Address Input, Byte Mode)  
Selects Byte or Word Mode  
No Connect  
BYTE  
NC  
Rev. 1139A–09/98  

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