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AT49BV322DT-70TU PDF预览

AT49BV322DT-70TU

更新时间： 2024-09-13 05:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
33页 494K
描述
32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory

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中文翻译

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AT49BV322DT-70TU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48
针数：48Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.56最长访问时间：70 ns
备用内存宽度：8启动块：TOP
命令用户界面：YES通用闪存接口：YES
数据轮询：YESJESD-30 代码：R-PDSO-G48
JESD-609代码：e3长度：18.4 mm
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：16湿度敏感等级：3
功能数量：1部门数/规模：8,63
端子数量：48字数：2097152 words
字数代码：2000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：2MX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：3 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：8K,64K
最大待机电流：0.000025 A子类别：Flash Memories
最大压摆率：0.025 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.65 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
切换位：YES类型：NOR TYPE
宽度：12 mmBase Number Matches：1

AT49BV322DT-70TU 数据手册

 浏览型号AT49BV322DT-70TU的Datasheet PDF文件第2页浏览型号AT49BV322DT-70TU的Datasheet PDF文件第3页浏览型号AT49BV322DT-70TU的Datasheet PDF文件第4页浏览型号AT49BV322DT-70TU的Datasheet PDF文件第5页浏览型号AT49BV322DT-70TU的Datasheet PDF文件第6页浏览型号AT49BV322DT-70TU的Datasheet PDF文件第7页 
Features  
• Single Voltage Read/Write Operation: 2.65V to 3.6V  
• Access Time – 70 ns  
• Sector Erase Architecture  
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout  
• Fast Word Program Time – 10 µs  
• Fast Sector Erase Time – 100 ms  
• Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending  
Programming of Any Other Byte/Word  
• Low-power Operation  
32-megabit  
(2M x 16/4M x 8)  
3-volt Only  
– 10 mA Active  
Flash Memory  
– 15 µA Standby  
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
• VPP Pin for Write Protection and Accelerated Program Operation  
• RESET Input for Device Initialization  
• Sector Lockdown Support  
• TSOP and CBGA Package Options  
• Top or Bottom Boot Block Configuration Available  
• 128-bit Protection Register  
AT49BV322D  
AT49BV322DT  
• Minimum 100,000 Erase Cycles  
• Common Flash Interface (CFI)  
1. Description  
The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152  
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on  
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-  
tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball  
CBGA package. The device has CE and OE control signals to avoid any bus conten-  
tion. This device can be read or reprogrammed using a single power supply, making it  
ideally suited for in-system programming.  
The device powers on in the read mode. Command sequences are used to place the  
device in other operation modes such as program and erase. The device has the  
capability to protect the data in any sector (see “Sector Lockdown” on page 7).  
To increase the flexibility of the device, it contains an Erase Suspend and Program  
Suspend feature. This feature will put the erase or program on hold for any amount of  
time and let the user read data from or program data to any of the remaining sectors  
within the memory. The end of a program or an erase cycle is detected by the  
READY/BUSY pin, Data Polling or by the toggle bit.  
3582B–FLASH–11/05  
1234567...33

中文翻译

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AT49BV322DT-70TU 替代型号

型号 品牌 替代类型 描述 数据表
AT49BV322AT-70TU ATMEL

完全替代

 Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48
AT49BV322AT-70TI ATMEL

完全替代

 32-megabit (2M x 16/4M x 8) 3-volt Only Flash Memory
JS28F320C3TD70 INTEL

类似代替

 Flash, 2MX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48

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 		4-Megabit 256K x 16 3-volt Only CMOS Flash Memory

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